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HMC232C8

更新时间: 2024-02-29 18:29:57
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关光电二极管分离技术隔离技术
页数 文件大小 规格书
6页 184K
描述
GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz

HMC232C8 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOP8,.3Reach Compliance Code:compliant
风险等级:5.611dB压缩点:26 dBm
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):30 dBm最大插入损耗:2.8 dB
最小隔离度:37 dB安装特点:SURFACE MOUNT
功能数量:1端子数量:8
准时:0.005 µs最大工作频率:8000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:CERAMIC
封装等效代码:SOP8,.3端口终止:ABSORPTIVE
射频/微波设备类型:SPDT表面贴装:YES
技术:GAASBase Number Matches:1

HMC232C8 数据手册

 浏览型号HMC232C8的Datasheet PDF文件第2页浏览型号HMC232C8的Datasheet PDF文件第3页浏览型号HMC232C8的Datasheet PDF文件第4页浏览型号HMC232C8的Datasheet PDF文件第5页浏览型号HMC232C8的Datasheet PDF文件第6页 
HMC232C8  
v02.1203  
MICROWAVE CORPORATION  
GaAs MMIC SMT HIGH ISOLATION  
SPDT SWITCH, DC - 8.0 GHz  
Typical Applications  
The HMC232C8 is ideal for:  
Telecom Infrastructure  
Features  
Isolation: 55 dB @ 2.0 GHz  
43 dB @ 6.0 GHz  
Insertion Loss: 1.6 dB Typical @ 6.0 GHz  
Non-Reflective Design  
• Microwave Radio & VSAT  
• Military Radios, Radar & ECM  
Test Instrumentation  
Surface Mount Ceramic Package  
Direct Replacement for HMC132C8  
General Description  
Functional Diagram  
The HMC232C8 is a broadband high isolation  
non-reflective GaAs MESFET SPDT switch in a  
non-hermetic surface mount ceramic package.  
Covering DC to 8.0 GHz, the switch features >55  
dB isolation up to 2 GHz and >42 dB isolation  
up to 8.0 GHz. The switch operates using  
complementary negative control voltage logic  
lines of -5/0V and requires no bias supply. This  
product is a form, fit & functional replacement for  
the HMC132C8.  
14  
Electrical Specifications,TA = +25° C, With 0/-5V Control, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 2.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
1.2  
1.6  
2.2  
1.5  
2.0  
2.8  
dB  
dB  
dB  
Insertion Loss  
DC - 2.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
50  
38  
37  
55  
43  
42  
dB  
dB  
dB  
Isolation  
DC - 2.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
19  
12  
10  
dB  
dB  
dB  
Return Loss  
“On State”  
“Off State”  
DC - 2.0 GHz  
DC - 6.0 GHz  
DC - 8.0 GHz  
13  
8
7
dB  
dB  
dB  
Return Loss RF1, RF2  
Input Power for 1 dB Compression  
Input Third Order Intercept  
0.5 - 8.0 GHz  
0.5 - 8.0 GHz  
22  
40  
26  
46  
dBm  
dBm  
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
DC - 8.0 GHz  
3
5
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 88  

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