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HMC226E PDF预览

HMC226E

更新时间: 2024-02-11 01:25:31
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关
页数 文件大小 规格书
6页 191K
描述
GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz

HMC226E 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
其他特性:CMOS/TTL COMPATIBLE特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):36 dBm
最大插入损耗:1.2 dBJESD-609代码:e3
最大工作频率:2000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:DIVERSITY SWITCH端子面层:Matte Tin (Sn)
Base Number Matches:1

HMC226E 数据手册

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HMC226 / 226E  
v03.0505  
GaAs MMIC +3V SOT26 TRANSMIT /  
RECEIVE SWITCH, DC - 2 GHz  
Typical Applications  
The HMC226 / HMC226E is ideal for:  
• 900 MHz ISM/Cellular  
Features  
Low Insertion Loss: 0.6 dB  
Ultra Small Package: SOT26  
High Input P1dB: +35 to +38 dBm  
High Input IP3: +55 to +61 dBm  
Positive Control: 0/+3V to 0/+8V  
Included in the HMC-DK005 Designer’s Kit  
• 1900 MHz PCS  
Functional Diagram  
General Description  
The HMC226 & HMC226E are low-cost SPDT swit-  
ches in 6-lead SOT26 packages for use in transmit-  
receive applications which require very low distortion  
at high signal power levels. The device can control  
signals from DC to 2.0 GHz and is especially suited  
for 450 MHz, 900 MHz, and 1.8 - 2 GHz applications  
with 0.5 to 0.8 dB loss. The design provides excep-  
tional P1dB and intermodulation performance; a  
+35 dBm 1dB compression point and +55 dBm  
third order intercept at +3 volt bias. RF1 and RF2  
are reflective opens when “Off”. On-chip circuitry  
allows single positive supply operation at very low DC  
current with control inputs compatible with CMOS  
and most TTL logic families.  
10  
Electrical Specifications, TA = +25° C, Vctl = 0/+3 Vdc, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 0.5 GHz  
DC - 1.0 GHz  
DC - 2.0 GHz  
0.5  
0.6  
0.8  
0.8  
0.9  
1.2  
dB  
dB  
dB  
Insertion Loss  
Isolation  
DC - 0.5 GHz  
DC - 1.0 GHz  
DC - 2.0 GHz  
23  
17  
12  
26  
20  
15  
dB  
dB  
dB  
DC - 0.5 GHz  
DC - 1.0 GHz  
DC - 2.0 GHz  
23  
21  
14  
27  
25  
18  
dB  
dB  
dB  
Return Loss  
0/5V Control  
0/3V Control  
34  
31  
38  
35  
dBm  
dBm  
Input Power for 1 dB Compression  
0.3 - 2.0 GHz  
Input Third Order Intercept  
(Two-Tone Input Power = +26 dBm Each Tone)  
0/5V Control  
0/3V Control  
61  
55  
dBm  
dBm  
0.3 - 2.0 GHz  
DC - 2.0 GHz  
Switching Characteristics  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
70  
140  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
10 - 54  

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