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HMC174MS8 PDF预览

HMC174MS8

更新时间: 2024-02-25 10:54:04
品牌 Logo 应用领域
HITTITE 射频和微波开关射频开关微波开关
页数 文件大小 规格书
6页 182K
描述
GaAs MMIC T/R SWITCH DC - 3 GHz

HMC174MS8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete针数:8
Reach Compliance Code:not_compliant风险等级:5.7
1dB压缩点:36 dBm最大插入损耗:1.8 dB
最小隔离度:15 dBJESD-609代码:e0
安装特点:SURFACE MOUNT功能数量:1
端子数量:8准时:0.024 µs
最大工作频率:3000 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP8,.19端口终止:REFLECTIVE
电源:5 V射频/微波设备类型:TRANSFER SWITCH
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

HMC174MS8 数据手册

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HMC174MS8  
v01.0101  
MICROWAVE CORPORATION  
GaAs MMIC T/R SWITCH  
DC - 3 GHz  
Typical Applications  
The HMC174MS8 is ideal for:  
• ISM Applications  
Features  
Ultra Small Package: MSOP8  
High Third Order Intercept: +60 dBm  
Single Positive Supply: +3 to +10V  
High RF power Capabilty  
• PCMCIA Wireless Cards  
• Portable Wireless  
General Description  
Functional Diagram  
The HMC174MS8 is a low-cost SPDT switch in  
an 8-lead MSOP package for use in transmit-  
receive applications which require very low dis-  
tortion at high signal power levels. The device  
can control signals from DC to 3.0 GHz and is  
especially suited for 900 MHz, 1.8 - 2.2 GHz, and  
2.4 GHz ISM applications with only 0.5 dB loss.  
The design provides exceptional intermodulation  
performance; providing a +60 dBm third order  
intercept at 8 Volt bias. RF1 and RF2 are reflec-  
tive shorts when “OFF”. On-chip circuitry allows  
single positive supply operation at very low DC  
current with control inputs compatible with CMOS  
and most TTL logic families.  
14  
Electrical Specifications,TA = +25° C, Vdd = +5 Vdc, 50 Ohm System  
Parameter  
Frequency  
Min.  
Typ.  
Max.  
Units  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
0.5  
0.5  
0.7  
1.4  
0.7  
0.8  
1.0  
1.8  
dB  
dB  
dB  
dB  
Insertion Loss  
Isolation  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
22  
20  
17  
13  
25  
24  
21  
17  
dB  
dB  
dB  
dB  
DC - 1.0 GHz  
DC - 2.0 GHz  
DC - 2.5 GHz  
DC - 3.0 GHz  
20  
16  
13  
9
28  
21  
17  
11  
dB  
dB  
dB  
dB  
Return Loss  
0.5 - 1.0 GHz  
0.5 - 3.0 GHz  
35  
34  
39  
38  
dBm  
dBm  
Input Power for 1dB Compression  
0/8V Control  
0/8V Control  
0.5 - 1.0 GHz  
0.5 - 3.0 GHz  
55  
55  
60  
60  
dBm  
dBm  
Input Third Order Intercept  
Switching Characteristics  
DC - 3.0 GHz  
tRISE, tFALL (10/90% RF)  
tON, tOFF (50% CTL to 10/90% RF)  
10  
24  
ns  
ns  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order Online at www.hittite.com  
14 - 20  

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