HMC-MDB171
v00.0907
GaAs MMIC I/Q MIXER
35 - 45 GHz
Typical Applications
Features
Wide IF Bandwidth: DC - 5 GHz
High Image Rejection: 25 dB
High LO to RF Isolation
This HMC-MDB171 is ideal for:
• Point-to-Point Radios
• Military Radar, ECM & EW
• Test & Measurement Equipment
• SATCOM
Passive: No DC Bias Required
Die Size: 1.5 x 2.0 x 0.1 mm
• Sensors
General Description
Functional Diagram
The HMC-MDB171 is a monolithic I/Q Mixer which can
beusedaseitheranimagerejectmixer(IRM)orasingle
sideband upconverter. This passive MMIC mixer is
fabricated with GaAs Heterojunction Bipolar Transistor
(HBT) Shottky diode technology. For downconversion
applications, an external quadrature hybrid can be
used to select the desired sideband while rejecting
image signals. All bond pads and the die backside
are Ti/Au metallized and the Shottky devices are fully
passivated for reliable operation. The HMC-MDB171
I/Q MMIC Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. All data shown herein
is measured with the chip in a 50 Ohm environment
and contacted with RF probes.
Electrical Specifications,* TA = 25 °C, IF = 3 GHz, LO = +16 dBm
Parameter
Min.
Typ.
35 - 45
DC - 5
8
Max.
11
Units
GHz
GHz
dB
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss with External Hybrid
Conversion Loss with out External Hybrid
1 dB Compression (Input)
Image Rejection
12.5
8
dB
dB
20
30
15
20
25
dB
LO to RF Isolation
35
dB
LO to IF Isolation
20
dB
RF to IF Isolation
25
dB
IP3 (Input)
17
dBm
*Unless otherwise indicated, all measurements are from probed die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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