HMC-MDB169
v00.0907
GaAs MMIC FUNDAMENTAL
MIXER, 54 - 64 GHz
Typical Applications
Features
Passive Double Balanced Topology
High LO to RF Isolation: 30 dB
Low Conversion Loss: 8 dB
This HMC-MDB169 is ideal for:
• Short Haul / High Capacity Radios
• Point-to-Multi-Point Equipment
• Military Radar, ECM & EW
• SATCOM
Wide IF Bandwidth: DC - 5 GHz
Die Size: 0.9 x 1.0 x 0.1 mm
4
General Description
Functional Diagram
The HMC-MDB169 is a passive Double Balanced
MMICMixerwhichutilizesGaAsHeterojunctionBipolar
Transistor (HBT) Shottky diode technology and can
be used as either an upconverter or a downconverter.
This compact mixer features wide IF bandwidth,
low conversion loss and high LO to RF and LO to IF
isolation. All bond pads and the die backside are Ti/Au
metallized and the Shottky devices are fully passivated
for reliable operation. The HMC-MDB169 Double
Balanced Mixer is compatible with conventional die
attach methods, as well as thermocompression and
thermosonic wire bonding, making it ideal for MCM and
hybrid microcircuit applications. This compact MMIC
is a much smaller and more consistent alternative to
hybrid style double balanced mixer assemblies. All
data shown herein is measured with the chip in a 50
Ohm environment and contacted with RF probes.
Electrical Specifications,[1] TA = 25 °C, IF = 2 GHz, LO = +13 dBm
Parameter
Min.
Typ.
54 - 64
DC - 5
8
Max.
11
Units
GHz
GHz
dB
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
LO to RF Isolation
30
dB
LO to IF Isolation
25
dB
RF to IF Isolation
25
dB
IP3 (Input)
13
dBm
dBm
1 dB Compression (Input)
4
[1] Unless otherwise indicated, all measurements are from probed die
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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