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2SJ294 PDF预览

2SJ294

更新时间: 2024-02-12 22:21:46
品牌 Logo 应用领域
日立 - HITACHI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 23K
描述
Silicon P Channel MOS FET

2SJ294 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:TO-220AB包装说明:TO-220FM, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.095 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Copper (Sn/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ294 数据手册

 浏览型号2SJ294的Datasheet PDF文件第2页浏览型号2SJ294的Datasheet PDF文件第3页 
2SJ294  
Silicon P Channel MOS FET  
Application  
TO–220FM  
High speed power switching  
Features  
• Low on–resistance  
• High speed switching  
• Low drive current  
• 4 V gate drive device can be driven from  
5 V source  
2
1
2
3
1
• Suitable for Switching regulator, DC – DC  
converter  
• Avalanche Ratings  
1. Gate  
2. Drain  
3. Source  
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
———————————————————————————————————————————  
Drain to source voltage  
V
–60  
V
DSS  
———————————————————————————————————————————  
Gate to source voltage  
V
±20  
V
GSS  
———————————————————————————————————————————  
Drain current  
I
–20  
A
D
———————————————————————————————————————————  
Drain peak current  
I
*
–80  
A
D(pulse)  
———————————————————————————————————————————  
Body–drain diode reverse drain current  
I
–20  
A
DR  
———————————————————————————————————————————  
Avalanche current  
I
***  
–20  
A
AP  
———————————————————————————————————————————  
Avalanche energy  
E
***  
34  
mJ  
AR  
———————————————————————————————————————————  
Channel dissipation  
Pch**  
35  
W
———————————————————————————————————————————  
Channel temperature  
Tch  
150  
°C  
———————————————————————————————————————————  
Storage temperature  
Tstg  
–55 to +150  
°C  
———————————————————————————————————————————  
PW 10 µs, duty cycle 1 %  
*
** Value at Tc = 25 °C  
*** Value at Tch = 25 °C, Rg 50 Ω  

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