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S3904-1024Q PDF预览

S3904-1024Q

更新时间: 2024-02-12 13:25:36
品牌 Logo 应用领域
HAMAMATSU 传感器换能器图像传感器
页数 文件大小 规格书
6页 241K
描述
NMOS Linear image sensor

S3904-1024Q 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N其他特性:DARK CURRENT 0.1PA
阵列类型:LINEAR主体宽度:10.4 mm
主体高度:3 mm主体长度或直径:40.6 mm
数据速率:2 Mbps水平像素:1024
外壳:QUARTZ GLASS安装特点:THROUGH HOLE MOUNT
最高工作温度:65 °C最低工作温度:-40 °C
输出类型:ANALOG CURRENT封装形状/形式:RECTANGULAR
像素大小:25X25 µm传感器/换能器类型:IMAGE SENSOR,NMOS
最大供电电压:10 V最小供电电压:4.5 V
表面贴装:NO端接类型:SOLDER
垂直像素:1024Base Number Matches:1

S3904-1024Q 数据手册

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I M A G E S E N S O R  
NMOS linear image sensor  
S3901/S3904 series  
Current output, high UV sensitivity, excellent linearity, low power consumption  
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning  
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active  
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output  
linearity and wide dynamic range.  
The photodiodes of S3901 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904 series also  
have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series: 128  
(S3901-128Q), 256 (S3901-256Q, S3904-256Q), 512 (S3901-512Q, S3904-512Q) and 1024 (S3904-1024Q). Quartz glass is the standard window  
material.  
Features  
Applications  
Wide active area  
Pixel pitch: 50 µm (S3901 series)  
Multichannel spectrophotometry  
Image readout system  
25 µm (S3904 series)  
Pixel height: 2.5 mm  
High UV sensitivity with good stability  
Low dark current and high saturation charge allow a long  
integration time and a wide dynamic range at room temperature  
Excellent output linearity and sensitivity spatial uniformity  
Lower power consumption: 1 mW Max.  
Start pulse and clock pulses are CMOS logic compatible  
Figure 1 Equivalent circuit  
Figure 2 Active area structure  
START st  
DEGITAL SHIFT RESISTER  
(MOS SHIFT RESISTER)  
END OF SCAN  
ACTIVE VIDEO  
CLOCK  
CLOCK  
1
2
ACTIVE  
PHOTODIODE  
Vss  
b
SATURATION  
CONTROL GATE  
a
SATURATION  
DUMMY VIDEO  
CONTROL DRAIN  
DUMMY DIODE  
OXIDATION SILICON  
KMPDC0020EA  
N TYPE SILICON  
P TYPE SILICON  
S3901 SERIES: a=50 µm, b=45 µm  
S3904 SERIES: a=25 µm, b=20 µm  
KMPDA0059EA  
Absolute maximum ratings  
Parameter  
Symbol  
Vφ  
Value  
15  
Unit  
V
mW  
°C  
Input pulse (φ1, φ2, φst) voltage  
Power consumption *1  
Operating temperature *2  
Storage temperature  
*1: Vφ=5.0 V  
P
1
Topr  
Tstg  
-40 to +65  
-40 to +85  
°C  
*2: No dew  

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