Datasheet > 传感器/换能器 > 图像传感器> S11155-2048-01

S11155-2048-01

更新时间： 2024-01-23 17:35:37

品牌	Logo	应用领域
HAMAMATSU		传感器换能器图像传感器
页数	文件大小	规格书
8页	468K
描述
S11155-2048-01 S11156-2048-01

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S11155-2048-01 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.7
其他特性：	IT HAS SENSITIVITY 7-9 UV/E	阵列类型：	LINEAR
主体宽度：	10.03 mm	主体高度：	4.46 mm
主体长度或直径：	38.1 mm	动态范围：	76.48 dB
外壳：	CERAMIC	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	50 °C	最低工作温度：	-50 °C
输出范围：	7-9V	输出类型：	ANALOG VOLTAGE
封装形状/形式：	RECTANGULAR	像素大小：	14X500 µm
传感器/换能器类型：	IMAGE SENSOR,CCD	光谱响应 (nm)：	200-1100
表面贴装：	NO	端接类型：	SOLDER
Base Number Matches：	1

S11155-2048-01 数据手册

CCD linear image sensors

S11155-2048-01 S11156-2048-01

Back-thinned CCD image sensors with

electronic shutter function

The S11155-2048-01 and S11156-2048-01 are back-thinned CCD linear image sensors with an internal electronic shutter

for spectrometers. These image sensors use a resistive gate structure that allows high-speed transfer. Each pixel has a

lengthwise size needed by spectrometers but ensures readout with low image lag.

Features

Applications

Built-in electronic shutter

Spectrometers

Image readout

Minimum integration time: 2 μs

High sensitivity from the ultraviolet region

(spectral response range: 200 to 1100 nm)

Readout speed: 10 MHz max.

Image lag: 0.1% typ.

Structure

Parameter

Pixel size (H × V)

Number of total pixels (H × V)

Number of effective pixels (H × V)

Image size (H × V)

Horizontal clock phase

Output circuit

S11155-2048-01

14 × 500 μm

S11156-2048-01

14 × 1000 μm

2068 × 1

2048 × 1

28.672 × 0.500 mm

28.672 × 1.000 mm

2-phase

Two-stage MOSFET source follower

24-pin ceramic DIP (refer to dimensional outline)

Quartz glass*²

Package

Window*¹

Cooling

Non-cooled

*1: Temporary window type (ex. S11155-2048N-01) is available upon request.

*2: Resin sealing

Resistive gate structure

In ordinary CCDs, one pixel contains multiple

[Figure 1] Schematic diagram and potential

[Figure 2] Schematic diagram and potential

of resistive gate structure

electrodes and a signal charge is transferred by

of ordinary 2-phase CCD

applying different clock pulses to those elec-

P1V

P2V

P1V

P2V

REGL

REGH STG

trodes [Figure 1]. In resistive gate structures,

a single high-resistance electrode is formed in

the active area, and a signal charge is trans-

ferred by means of a potential slope that is

created by applying different voltages across

the electrode [Figure 2]. Compared to a CCD

area image sensor which is used as a linear

sensor by line binning, a one-dimensional CCD

having a resistive gate structure in the active

area offers higher speed transfer, allowing

readout with low image lag even if the pixel

height is large.

Resistive gate

N^-

P⁺

N^-

Potential slope

KMPDC0320EA

KMPDC0321EB

www.hamamatsu.com

12 3 4 5 6 7 8

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与S11155-2048-01相关器件

型号	品牌	描述	获取价格	数据表
S11155-2048-01_15	HAMAMATSU	CCD linear image sensors	获取价格
S11155-2048-02	HAMAMATSU	CCD Sensor, 2048 Horiz pixels, 1 Vert pixels, 9-11V, Rectangular, Through Hole Mount, DIP-	获取价格
S11156-2048	HAMAMATSU	Back-thinned CCD image sensors with electronic shutter function	获取价格
S11156-2048-01	HAMAMATSU	CCD Sensor, 7-9V, Rectangular, Through Hole Mount, CERAMIC, DIP-24	获取价格
S11156-2048-02	HAMAMATSU	CCD Sensor,	获取价格
S1117	SEMIWELL	LDO Linear Regulator	获取价格

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