Datasheet > GSCLAMP3310PE

GSCLAMP3310PE

更新时间： 2024-02-27 19:58:24

品牌	Logo	应用领域
固锝 - GOOD-ARK		二极管
页数	文件大小	规格书
3页	637K
描述
Trans Voltage Suppressor Diode,

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技术参数
数据手册

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GSCLAMP3310PE 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.77	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

GSCLAMP3310PE 数据手册

GSCLAMP3310PE

Ultra Low Capacitance ESD TVS Array

Features

■

DFN3310 package

■

Protects up to 6-Lines operating at 5V

R2R+Zener technology

Low clamping voltage

Low leakage current

DFN3310

Ultra low capacitance (0.15pF typical I/O to I/O)

ESD Protection for high-speed data lines to:

IEC 61000-4-2 ±8KV contact ±15KV air

RoHS compliant

GND

■

I/O I/O GND I/O I/O GND I/O I/O

Applications

Pin Configuration

■

USB 3.0/3.1

HDMI 1.4/2.0, Display Port 1.3, eSATA

Unified Display Interface (UDI)

Digital Visual Interface (DVI)

High speed serial interfaces

Schematic Diagram

Absolute Maximum Ratings

(T_A=25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

°C

Junction Temperature

T_J

T_STG

T_L

-55 to +125

-55 to +150

260 (10sec.)

Storage Temperature

Lead Soldering Temperature

IEC 61000-4-2 Contact (ESD)

VESD

IEC 61000-4-2 Air (ESD)

VESD

Electrical Characteristics

(T_A=25°C unless otherwise specified)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Reverse stand-off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

V_RWM

V_BR

I_R

9.5

I_T=1mA

V_R=5V

7.2

0.01

μA

Clamping Voltage (IEC 61000-4-5)

Trigger Voltage (IEC 61000-4-2)

Clamping Voltage (IEC 61000-4-2)

I_PP=3A，T_P=8/20μS

V_ESD=8kV

V_C

V_T

135

V_{ESD =8kV}

V_C

C_J

V_R=0V,f=1MHz, I/O to I/O

V_R=0V,f=1MHz, I/O to GND

0.15

0.35

Junction Capacitance

C_J

1/3

12 3

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