1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Features
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
D IM E N S IO N S
in c h e s
m m
D IM
N o te
M in .
M a x .
0 .1 5 4
0 .0 7 5
0 .0 2 0
-
M in .
M a x .
3 .9
1 .9
0 .5 2
-
A
B
C
D
-
-
-
-
-
-
D IM E N S IO N S
1 .0 8 3
2 7 .5 0
in c h e s
m m
D IM
N o te
M in .
M a x .
0 .11 4
0 .0 7 5
0 .0 1 7
-
M in .
M a x .
2 .9
1 .9
0 .4 2
-
A
B
C
D
-
-
-
-
-
-
0 .6 3 0
1 6 .0
Electrical Characteristics
Type
Peak
Max.
Max.
Max.
Max. forward Max. reverse Max. reverse recovery time
reverse aver.
power
junction voltage drop
current
voltage rectified dissip.
current at 25
temper-
ature
at
IF mA
at
VR
VRM
V
IO mA
Ptot mW
Tj
VF
V
In nA
trr nS
Conditions
V
1N914
100
75
500
500
500
400
400
500
500
500
400
400
400
400
200
200
200
175
175
200
200
200
175
175
175
175
1.0
10
25
25
20
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 4.0 IF=IR=10 to 200 mA, to 0.1 IF
1)
1N4149
100
50
150
200
150
150
1.0
1.0
10
20
50
30
50
25
20
20
30
30
20
50
1N4150
1N4152
1N4153
1N4154
200
0.10
0.10
0.10
20
100
50
40
0.55
0.55
1.0
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
Max. 4.0 IF=IR=10mA, to IR=1mA
75
50
2)
35
150
100
25
1)
1N4447
1N4449
100
100
40
150
150
150
150
150
150
1.0
1)
1.0
30
25
1N4450
1N4451
1N4453
1N4454
0.54
0.50
0.55
1.0
0.50
0.10
0.01
10
50
40
50
Max. 10 IF=IR=10mA, to IR=1mA
30
50
-
-
75
100
Max. 4.0 IF=IR=10mA, to IR=1mA
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
Ptot=300mW
TJ=175
TS=-65 to +175
Rtha 0.4K/mW
1