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1N4453

更新时间: 2024-01-17 16:07:17
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管局域网
页数 文件大小 规格书
1页 27K
描述
SILICON EPITAXIAL PLANAR DIODES

1N4453 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.55 V
元件数量:1最高工作温度:175 °C
最大输出电流:0.15 A最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

1N4453 数据手册

  
1N914 THRU 1N4454  
SILICON EPITAXIAL PLANAR DIODES  
Features  
Silicon Epitaxial Planar Diodes  
for general purpose and switching  
The types 1N4149, 1N4447 and 1N4449 are also available  
in glass case DO-34.  
D IM E N S IO N S  
in c h e s  
m m  
D IM  
N o te  
M in .  
M a x .  
0 .1 5 4  
0 .0 7 5  
0 .0 2 0  
-
M in .  
M a x .  
3 .9  
1 .9  
0 .5 2  
-
A
B
C
D
-
-
-
-
-
-
D IM E N S IO N S  
1 .0 8 3  
2 7 .5 0  
in c h e s  
m m  
D IM  
N o te  
M in .  
M a x .  
0 .11 4  
0 .0 7 5  
0 .0 1 7  
-
M in .  
M a x .  
2 .9  
1 .9  
0 .4 2  
-
A
B
C
D
-
-
-
-
-
-
0 .6 3 0  
1 6 .0  
Electrical Characteristics  
Type  
Peak  
Max.  
Max.  
Max.  
Max. forward Max. reverse Max. reverse recovery time  
reverse aver.  
power  
junction voltage drop  
current  
voltage rectified dissip.  
current at 25  
temper-  
ature  
at  
IF mA  
at  
VR  
VRM  
V
IO mA  
Ptot mW  
Tj  
VF  
V
In nA  
trr nS  
Conditions  
V
1N914  
100  
75  
500  
500  
500  
400  
400  
500  
500  
500  
400  
400  
400  
400  
200  
200  
200  
175  
175  
200  
200  
200  
175  
175  
175  
175  
1.0  
10  
25  
25  
20  
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 4.0 IF=IR=10 to 200 mA, to 0.1 IF  
1)  
1N4149  
100  
50  
150  
200  
150  
150  
1.0  
1.0  
10  
20  
50  
30  
50  
25  
20  
20  
30  
30  
20  
50  
1N4150  
1N4152  
1N4153  
1N4154  
200  
0.10  
0.10  
0.10  
20  
100  
50  
40  
0.55  
0.55  
1.0  
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
Max. 4.0 IF=IR=10mA, to IR=1mA  
75  
50  
2)  
35  
150  
100  
25  
1)  
1N4447  
1N4449  
100  
100  
40  
150  
150  
150  
150  
150  
150  
1.0  
1)  
1.0  
30  
25  
1N4450  
1N4451  
1N4453  
1N4454  
0.54  
0.50  
0.55  
1.0  
0.50  
0.10  
0.01  
10  
50  
40  
50  
Max. 10 IF=IR=10mA, to IR=1mA  
30  
50  
-
-
75  
100  
Max. 4.0 IF=IR=10mA, to IR=1mA  
Notes:  
(1) These diodes are also avaiable in glass case DO-34  
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature  
Parameters for diodes in case DO-34:  
Ptot=300mW  
TJ=175  
TS=-65 to +175  
Rtha 0.4K/mW  
1

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