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EDC1UV6414-60TG-S PDF预览

EDC1UV6414-60TG-S

更新时间: 2024-02-27 05:53:56
品牌 Logo 应用领域
富士通 - FUJITSU 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
8页 134K
描述
EDO DRAM Module, 1MX64, 60ns, CMOS, PDMA168

EDC1UV6414-60TG-S 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM, DIMM168针数:168
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:60 nsI/O 类型:COMMON
JESD-30 代码:R-PDMA-N168内存密度:67108864 bit
内存集成电路类型:EDO DRAM MODULE内存宽度:64
端子数量:168字数:1048576 words
字数代码:1000000最高工作温度:70 °C
最低工作温度:组织:1MX64
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:DIMM封装等效代码:DIMM168
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
电源:3.3 V认证状态:Not Qualified
刷新周期:4096最大待机电流:0.004 A
子类别:DRAMs最大压摆率:0.36 mA
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUALBase Number Matches:1

EDC1UV6414-60TG-S 数据手册

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November 1996  
Revision 1.1  
DATA SHEET  
EDC1UV641(1/4)-(60/70)(J/T)G-S  
8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V  
General Description  
The EDC1UV641(1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module  
organized as 1M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.  
The module utilizes four, Fujitsu MB81V1(8/6)165A-(60/70) (PJ/FN) CMOS 1Mx16 EDO dynamic RAMs in a surface mount  
package on an epoxy laminate substrate. Each device is accompanied by a decoupling capacitor for improved noise immunity.  
Control lines provided are such that byte control is possible. Serial PD on the module is provided by using 128 byte serial EEPROM.  
Features  
• High Density:8MByte  
• Fast Access Time of 60/70 ns (max.)  
• Low Power: 2.6/2.4 W (max.) - Active (60/70 ns) : 1KR  
1.6/1.4 W (max.) - Active (60/70 ns) : 4KR  
29mW (max.)  
14mW (max.)  
- Standby (LVTTL)  
- Standby (CMOS)  
• LVTTL-compatible inputs and outputs  
• Separate power and ground planes to improve noise immunity  
• Single power supply of 3.3V±0.3V  
• Height: 0.86 inch  
ABSOLUTE MAXIMUM RATINGS  
Item  
Symbol  
Ratings  
-0.5 to +4.6  
4
Unit  
V
Voltage on any pin relative to V  
V
P
SS  
T
Power Dissipation  
W
T
T
Operating Temperature  
Storage Temperate  
0 to +70  
-55 to +125  
50  
°C  
°C  
mA  
opr  
T
stg  
OS  
I
Short Circuit Output Current  
RECOMMENDED DC OPERATING CONDITIONS  
(TA = 0 to +70 °C)  
Symbol  
Parameter  
Supply Voltage  
Min  
Typ  
Max  
3.6  
0
Unit  
V
V
V
V
3.0  
0
3.3  
V
V
V
V
CC  
SS  
IH  
Ground  
0
-
V
+0.3  
Input High voltage  
Input Low voltage  
2.0  
-0.3  
CC  
-
0.8  
IL  
Fujitsu Microelectronics, Inc.  
1

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