Datasheet > CS86

CS86

更新时间： 2022-12-01 12:23:07

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
16页	134K
描述
The CS86 series of 0.18 mm standard cells is a line of CMOS ASICs based on higher integration implemented

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CS86 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS06-20209-2E

Semicustom

CMOS

Standard cell

CS86 Series

■ DESCRIPTION

The CS86 series of 0.18 µm standard cells is a line of CMOS ASICs based on higher integration implemented

by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81

series.

The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,

from portable devices requiring low power consumption to image processors requiring large-scale circuitry and

high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-

mented which require low power consumption as well as high-speed operation for certain types of processing.

■ FEATURES

• Technology

: 0.18 µm silicon-gate CMOS, 4- to 6-layer wiring

The same chip can therefore incorporate the standard transistor cell and the ultrahigh-

speed or low-leakage process cell together.

• Supply voltage

: +1.8 V ± 0.15 V (normal) to +1.1 V ± 0.1 V

• Junction temperature range : −40 °C to +125 °C

• Cell set

CS86MN : Offers standard transistor characteristics. Designed as a library for products requiring higher

throughputs.

CS86MZ : Offers transistor characteristics for ultra high-speed operation. Designed as a library for

products that require higher processing speeds than those provided by CS86MN.

CS86ML :

Offers transistor charactersistics with less leak current. Designed as a library for mobile

devices and other products requiring lower power consumption.

• Cell Specifications :

Cell set name

Delay time*¹

CS86MZ

CS86MN

88 ps

CS86ML

136 ps

70 ps

Power consumption*²42.7 nW/MHz

Leak power*³

3.922 nW

40.1 nW/MHz

0.023 nW

38.3 nW/MHz

0.0067 nW

*1 : 2 input NAND cell (low-power type) , F/O = 2, normal load, Power supply voltage 1.8 V, Temperature = +25 °C

*2 : 2 input NAND cell (low-power type) , F/O = 1, 4 Grid, Power supply voltage 1.8 V, Temperature = +25 °C

*3 : 2 input NAND cell (low-power type) , F/O = 0, non load, Power supply voltage 1.8 V, Temperature = +25 °C

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