CE66 Series Embedded Array
0.35µm CMOS Technology
Features
• 0.28µm Leff (0.34µm drawn)
• Propagation delay of 98 ps
5V I/O
5V I/O
5V I/O
5V I/O
5V I/O
3V I/O
3V I/O
3V I/O
PCML
3V I/O
3V I/O
5V I/O
5V I/O
5V I/O
5V I/O
5V I/O
• Mixed-signal macros:A/D and D/A converters
• High-density diffused RAMs and ROMs
• Separate core and I/O supply voltages
• I/Os: 5V, 3.3V, 5V tolerant
• Core power supply voltage: 3.3V, 2.5V~2.0V
Fixed
Layout
Soft Macro
Embedded
Hard
Macro
Clk
Clock Tree
• Junction temperature: -40ºC~125ºC
2
Fixed
Layout
Soft Macro
• Special I/Os: PCI, I C, USB
•Analog and digital PLLs
• Packaging options: QFP, HQFP, LQFP,TQFP, PBGA,FBGA
• Support for major third party EDA tools
Description
Fujitsu’s CE66 is a series of high-performance, CMOS
embedded arrays featuring mixed-signal macros, diffused
high-speed RAMs, ROMs, and a variety of other embedded
functions.The CE66 series combines the density and
performance of standard cells with the time-to-market
advantage of gate arrays. In addition, the I/Os, operating
at 5V, 3.3V, and 5V tolerant conditions, are designed to
provide cost-effective solutions for both core-limited and
pad-limited designs.The CE66 series features a very low
power consumption of 0.29µW/gate/MHz at 3.3V. Potential
applications for the CE66 series include the consumer
market, communications, and networking designs.
P-Series with 100µm Inline Pad Pitch
Frame
CE66P1
CE66P2
CE66P3
CE66P4
CE66P5
CE66P6
CE66P7
CE66P8
CE66P9
CE66PA
CE66PB
CE66PC
CE66PD
CE66PE
CE66PF
Total Gates
188K
Total Pads
144
Signals
126
138
132
152
178
178
178
206
228
228
228
264
264
264
312
233K
160
283K
176
337K
192
396K
208
427K
216
460K
224
528K
240
602K
256
680K
272
761K
288
847K
304
940K
320
1037K
1138K
336
352
S-Series with 70µm Inline Pad Pitch
Frame
CE66S1
CE66S2
CE66S3
CE66S4
CE66S5
CE66S6
CE66S7
CE66S8
CE66S9
CE66SA
Total Gates
91K
Total Pads
144
Signals
126
113K
137K
164K
207K
256K
311K
391K
481K
580K
160
138
176
152
192
160
216
178
240
193
264
228
296
248
328
248
360
312