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29LV650 PDF预览

29LV650

更新时间: 2022-11-25 16:16:32
品牌 Logo 应用领域
富士通 - FUJITSU /
页数 文件大小 规格书
57页 587K
描述
64M (4M x 16) BIT

29LV650 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-20882-2E  
FLASH MEMORY  
CMOS  
64M (4M × 16) BIT  
MBM29LV650UE/651UE -90/12  
DESCRIPTION  
The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The  
device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and  
5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard  
EPROM programmers.  
To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable  
(OE) controls.  
The MBM29LV650UE/651UE is entirely command set compatible with JEDEC single-power-supply Flash stan-  
dard. Commands are written to the command register using standard microprocessor write timings. Register  
contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write  
cycles also internally latch addresses and data needed for the programming and erase operations.  
Typically, each sector can be programmed and verified in about 0.5 seconds.  
(Continued)  
PRODUCT LINEUP  
Part No.  
VCC = 3.3 V  
MBM29LV650UE/651UE  
+0.3 V  
–0.3 V  
90  
Ordering Part No.  
+0.6 V  
–0.3 V  
12  
VCC = 3.0 V  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
90  
90  
35  
120  
120  
50  
PACKAGES  
48-pin plastic TSOP (I)  
Marking Side  
Marking Side  
(FPT-48P-M19)  
(FPT-48P-M20)  

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