5秒后页面跳转
YA875C12R PDF预览

YA875C12R

更新时间: 2024-01-28 04:20:07
品牌 Logo 应用领域
富士电机 - FUJI 局域网二极管
页数 文件大小 规格书
5页 575K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 120V V(RRM), Silicon, TO-220AB, TO-220AB, 3 PIN

YA875C12R 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.54其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:145 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:120 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

YA875C12R 数据手册

 浏览型号YA875C12R的Datasheet PDF文件第2页浏览型号YA875C12R的Datasheet PDF文件第3页浏览型号YA875C12R的Datasheet PDF文件第4页浏览型号YA875C12R的Datasheet PDF文件第5页 
http://www.fujisemi.com  
FUJI Diode  
YA875C12R (120V, 20A)  
Ultra Low IR Schottky Barrier Diode  
Connection diagram  
Features  
Outline Drawings [mm]  
• Ultra Low IR  
TO-220AB  
• Low V  
F
• Tj MAX = 175˚C  
• High reliability at higher temperatures  
YA875C12  
YA875C12  
Applications  
• High frequency operation  
• DC-DC converters  
• AC adapter  
Note:1 Country of origin mark.  
"P" is Made in PHILIPPINES.  
Maximum Ratings and Characteristics  
Maximum ratings (at Ta=25˚C Unless otherwise specified)  
Item  
Repetitive peak reverse voltage  
Symbols  
Conditions  
Ratings  
Units  
VRRM  
120  
V
50Hz Square wave duty =1/2  
Tc =144˚C  
Average output current  
I
O
20 *  
A
Non-repetitive surge current **  
Operating junction temperature  
Storage temperature  
I
FSM  
Sine wave, 10ms 1shot  
145  
175  
A
Tj  
˚C  
˚C  
T
stg  
-40 to +175  
*Out put current of center tap full wave connection.  
**Rating per element  
Electrical characteristics (at Ta=25˚C Unless otherwise specified)  
Item  
Symbols  
Conditions  
= 10 A  
Maximum  
0.88  
Units  
V
Forward voltage***  
Reverse current***  
Thermal resistance  
***Rating per element  
V
F
I
F
I
R
V
R
=VRRM  
20  
µA  
Rth(j-c)  
Junction to case  
1.75  
˚C/W  
Mechanical characteristics  
Item  
Conditions  
Recommended torque  
Ratings  
0.3 to 0.5  
2.0  
Units  
N•m  
g
Mounting torque  
Approximate mass  
1

与YA875C12R相关器件

型号 品牌 描述 获取价格 数据表
YA875C15R FUJI Ultra Low IR Schottky Barrier Diode

获取价格

YA875C20R FUJI Ultra Low IR Schottky Barrier Diode

获取价格

YA8779-BL COILCRAFT

获取价格

YA878C10R FUJI Ultra Low IR Schottky Barrier Diode

获取价格

YA878C12R FUJI Ultra Low IR Schottky Barrier Diode

获取价格

YA878C15R FUJI Ultra Low IR Schottky Barrier Diode

获取价格