Datasheet > MRF6P9220HR3

MRF6P9220HR3

更新时间： 2024-01-10 07:58:49

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管放大器局域网
页数	文件大小	规格书
12页	435K
描述
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET

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MRF6P9220HR3 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.74	Is Samacsys：	N
外壳连接：	SOURCE	配置：	COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压：	68 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-CDFM-F4
湿度敏感等级：	NOT SPECIFIED	元件数量：	2
端子数量：	4	工作模式：	ENHANCEMENT MODE
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	COMMERCIAL
表面贴装：	YES	端子面层：	NOT SPECIFIED
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

MRF6P9220HR3 数据手册

Document Number: MRF6P9220H

Rev. 1, 11/2005

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large-signal, common-source amplifier

applications in 28 volt base station equipment.

MRF6P9220HR3

• Typical Single-Carrier N-CDMA Performance @ 880 MHz: V_DD= 28 Volts,

_DQ= 1600 mA, P_out= 47 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

880 MHz, 47 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

RF POWER MOSFET

Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 20 dB

Drain Efficiency — 30%

ACPR @ 750 kHz Offset — -47.1 dBc in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW

Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Device Designed for Push-Pull Operation Only

• Qualified Up to a Maximum of 32 V_DDOperation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

CASE 375G-04, STYLE 1

NI-860C3

Applications

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• Pb-Free and RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

Drain-Source Voltage

Gate-Source Voltage

DSS

-0.5, +68

-0.5, +12

Total Device Dissipation @ T = 25°C

700

W/°C

Derate above 25°C

Storage Temperature Range

Operating Junction Temperature

CW Operation

- 65 to +150

200

°C

stg

220

Table 2. Thermal Characteristics

(1,2)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 220 W CW

Case Temperature 76°C, 47 W CW

°C/W

0.25

0.28

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to

access the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF6P9220HR3

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...12

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