Datasheet > 476KXM050M

476KXM050M

更新时间： 2024-01-10 05:10:49

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体电容器晶体管功率场效应晶体管射频
页数	文件大小	规格书
11页	748K
描述
RF Power Field Effect Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

476KXM050M 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.75	电容器类型：	ALUMINUM ELECTROLYTIC CAPACITOR
介电材料：	ALUMINUM (WET)	端子数量：	2
Base Number Matches：	1

476KXM050M 数据手册

Document Number: MRF6VP11KH

Rev. 7, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for pulsed wideband applications with frequencies up to

150 MHz. Device is unmatched and is suitable for use in industrial, medical

and scientific applications.

MRF6VP11KHR6

•

Typical Pulsed Performance at 130 MHz: V_DD= 50 Volts, I_DQ= 150 mA,

_out= 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,

1.8--150 MHz, 1000 W, 50 V

LATERAL N--CHANNEL

BROADBAND

Duty Cycle = 20%

Power Gain — 26 dB

Drain Efficiency — 71%

RF POWER MOSFET

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak

Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

CASE 375D--05, STYLE 1

NI--1230

•

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

PART IS PUSH--PULL

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle

Case Temperature 67°C, 1000 W CW, 100 MHz

0.03

0.13

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6VP11KHR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...11

下载PDF

与476KXM050M相关器件

型号	品牌	描述	获取价格	数据表
476KXM050MB	ILLINOISCAPACITOR	Aluminum Electrolytic Capacitor, Aluminum (wet)	获取价格
476KXM050MCC	ILLINOISCAPACITOR	Aluminum Electrolytic Capacitor, Aluminum (wet)	获取价格
476KXM063KB	ILLINOISCAPACITOR	Aluminum Electrolytic Capacitor, Aluminum (wet)	获取价格
476KXM063KSJ	ILLINOISCAPACITOR	Aluminum Electrolytic Capacitor, Aluminum (wet)	获取价格
476KXM063M	FREESCALE	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs	获取价格
476KXM063M	ILLINOISCAPACITOR	+105°C Low Impedance Radial Lead Aluminum Ele	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

476KXM050M

476KXM050M 技术参数

476KXM050M 数据手册

与476KXM050M相关器件

与476KXM050M相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

476KXM050M

476KXM050M 技术参数

476KXM050M 数据手册

与476KXM050M相关器件

与476KXM050M相关文章

您还可以找

您在本页遇到什么问题？