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2743019447 PDF预览

2743019447

更新时间: 2024-01-05 10:15:31
品牌 Logo 应用领域
飞思卡尔 - FREESCALE PC
页数 文件大小 规格书
15页 525K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

2743019447 技术参数

生命周期:Obsolete包装说明:ROHS COMPLIANT PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.32
认证:IEC最大直流电阻:0.0008 Ω
滤波器类型:FERRITE CHIP高度:2.85 mm
JESD-609代码:e3长度:5.1 mm
安装类型:SURFACE MOUNT功能数量:1
最高工作温度:125 °C最低工作温度:-55 °C
输出阻抗:47 OHM Ω包装方法:TAPE AND REEL
物理尺寸:L5.1XB3.05XH2.85 (mm)/L0.201XB0.12XH0.112 (inch)额定电流:5 A
端子面层:TIN宽度:3.05 mm
Base Number Matches:1

2743019447 数据手册

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Document Number: MRF5S4125N  
Rev. 0, 1/2007  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S4125NR1  
MRF5S4125NBR1  
Designed for broadband commercial and industrial applications with  
frequencies up to 500 MHz. The high gain and broadband performance of  
these devices make them ideal for large-signal, common-source amplifier  
applications in 28 volt base station equipment.  
Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts,  
450-480 MHz, 25 W AVG., 28 V  
SINGLE N-CDMA  
I
DQ = 1100 mA, Pout = 25 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,  
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =  
9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 23 dB  
Drain Efficiency — 30.2%  
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW  
Output Power  
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
CASE 1486-03, STYLE 1  
TO-270 WB-4  
MRF5S4125NR1  
200°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1484-04, STYLE 1  
TO-272 WB-4  
MRF5S4125NBR1  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-0.5, +65  
-0.5, +15  
- 65 to +150  
200  
Unit  
Vdc  
Vdc  
°C  
Drain-Source Voltage  
Gate-Source Voltage  
Storage Temperature Range  
V
DSS  
V
GS  
T
stg  
(1,2)  
Operating Junction Temperature  
T
°C  
J
Table 2. Thermal Characteristics  
Characteristic  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 90°C, 125 W CW  
Case Temperature 90°C, 25 W CW  
R
θ
JC  
°C/W  
0.33  
0.43  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2007. All rights reserved.  

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