Document Number: MRF6VP2600H
Rev. 5.1, 7/2010
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for wideband applications with frequencies up to 500 MHz.
Device is unmatched and is suitable for use in broadcast applications.
MRF6VP2600HR6
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Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA,
Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,
Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
Power Gain — 25 dB
2--500 MHz, 600 W, 50 V
LATERAL N--CHANNEL
BROADBAND
Drain Efficiency — 28.5%
RF POWER MOSFET
ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth
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Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA,
Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty
Cycle = 20%
Power Gain — 25.3 dB
Drain Efficiency — 59%
Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak
Power, Pulse Width = 100 μsec, Duty Cycle = 20%
Features
•
•
•
•
•
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Characterized with Series Equivalent Large--Signal Impedance Parameters
CASE 375D--05, STYLE 1
NI--1230
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
PART IS PUSH--PULL
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RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +110
--6.0, +10
-- 65 to +150
150
Unit
Drain--Source Voltage
V
Vdc
Vdc
°C
DSS
Gate--Source Voltage
V
GS
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
stg
T
C
°C
(1,2)
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I = 2600 mA
0.20
0.14
0.16
DQ
Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I
= 150 mA
DQ
Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I
= 150 mA
DQ
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserved.
MRF6VP2600HR6
RF Device Data
Freescale Semiconductor
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