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1812SMS--82NJL PDF预览

1812SMS--82NJL

更新时间: 2022-06-06 06:23:42
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管射频
页数 文件大小 规格书
18页 1498K
描述
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

1812SMS--82NJL 数据手册

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Document Number: MRF6V2150N  
Rev. 4, 4/2010  
Freescale Semiconductor  
Technical Data  
RF Power Field--Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF6V2150NR1  
MRF6V2150NBR1  
Designed primarily for CW large--signal output and driver applications with  
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in  
industrial, medical and scientific applications.  
Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,  
10--450 MHz, 150 W, 50 V  
LATERAL N--CHANNEL  
SINGLE--ENDED  
BROADBAND  
RF POWER MOSFETs  
Pout = 150 Watts  
Power Gain — 25 dB  
Drain Efficiency — 68.3%  
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW  
Output Power  
Features  
CASE 1486--03, STYLE 1  
T O -- 2 7 0 W B -- 4  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
PLASTIC  
MRF6V2150NR1  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1484--04, STYLE 1  
T O -- 2 7 2 W B -- 4  
PLASTIC  
MRF6V2150NBR1  
PARTS ARE SINGLE--ENDED  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
-- 0.5, +110  
-- 0.5, +12  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
RF /V  
in GS  
RF /V  
out DS  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
RF /V  
in GS  
RF /V  
out DS  
T
C
°C  
(1,2)  
T
J
225  
°C  
(Top View)  
Table 2. Thermal Characteristics  
Characteristic  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 80°C, 150 W CW  
Figure 1. Pin Connections  
R
θ
0.24  
°C/W  
JC  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2 (Minimum)  
A (Minimum)  
IV (Minimum)  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.  

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