Datasheet > 1812SMS--82NJ

1812SMS--82NJ

更新时间： 2022-06-05 22:21:58

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
19页	1190K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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1812SMS--82NJ 数据手册

Document Number: MRF6V2300N

Rev. 5, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V2300NR1

MRF6V2300NBR1

Designed primarily for CW large--signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance: V_DD= 50 Volts, I_DQ= 900 mA,

10--600 MHz, 300 W, 50 V

LATERAL N--CHANNEL

SINGLE--ENDED

BROADBAND

RF POWER MOSFETs

_out= 300 Watts, f = 220 MHz

Power Gain — 25.5 dB

Drain Efficiency — 68%

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

PLASTIC

MRF6V2300NR1

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

PLASTIC

MRF6V2300NBR1

PARTS ARE SINGLE--ENDED

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--0.5, +10

-- 65 to +150

150

Unit

Vdc

°C

RF /V

in GS

RF /V

out DS

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

RF /V

in GS

RF /V

out DS

°C

(1,2)

225

°C

(Top View)

Table 2. Thermal Characteristics

Characteristic

Note: Exposed backside of the package is

the source terminal for the transistor.

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 83°C, 300 W CW

Figure 1. Pin Connections

0.24

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

2 (Minimum)

A (Minimum)

IV (Minimum)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V2300NR1 MRF6V2300NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...19

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