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100B180JP500X PDF预览

100B180JP500X

更新时间: 2024-01-23 12:02:52
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
20页 928K
描述
N-Channel Enhancement-Mode Lateral MOSFETs

100B180JP500X 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CHIP
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8532.24.00.20风险等级:1.06
其他特性:MIL-PRF-55681, MIL-PRF-123电容:0.000018 µF
电容器类型:CERAMIC CAPACITOR介电材料:CERAMIC
高度:2.59 mmJESD-609代码:e0
长度:2.79 mm安装特点:SURFACE MOUNT
多层:Yes负容差:5%
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装形式:SMT
包装方法:TR正容差:5%
额定(直流)电压(URdc):500 V尺寸代码:1111
表面贴装:YES温度特性代码:P90
温度系数:90+/-20ppm/Cel ppm/ °C端子面层:Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
端子形状:WRAPAROUND宽度:2.79 mm
Base Number Matches:1

100B180JP500X 数据手册

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Document Number: MRF5S4140H  
Rev. 2, 5/2006  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S4140HR3  
MRF5S4140HSR3  
Designed for broadband commercial and industrial applications with frequen-  
cies from 400 to 500 MHz. The high gain and broadband performance of these  
devices make them ideal for large-signal, common-source amplifier applica-  
tions in 28-volt base station equipment.  
Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts,  
465 MHz, 28 W AVG., 28 V  
SINGLE N-CDMA  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
I
DQ = 1250 mA, Pout = 28 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,  
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =  
9.8 dB @ 0.01% Probability on CCDF.  
Power Gain — 21 dB  
Drain Efficiency — 30%  
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth  
Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW  
Output Power  
Features  
Characterized with Series Equivalent Large-Signal Impedance Parameters  
Internally Matched for Ease of Use  
Qualified Up to a Maximum of 32 VDD Operation  
Integrated ESD Protection  
CASE 465-06, STYLE 1  
NI-780  
MRF5S4140HR3  
Lower Thermal Resistance Package  
Low Gold Plating Thickness on Leads, 40μNominal.  
RoHS Compliant  
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
CASE 465A-06, STYLE 1  
NI-780S  
MRF5S4140HSR3  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
-0.5, +65  
-0.5, +15  
V
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
427  
2.4  
W
W/°C  
C
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
- 65 to +150  
150  
°C  
°C  
°C  
stg  
T
C
T
200  
J
Table 2. Thermal Characteristics  
(1,2)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 73°C, 140 W CW  
Case Temperature 74°C, 28 W CW  
R
°C/W  
θ
JC  
0.41  
0.47  
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes - AN1955.  
© Freescale Semiconductor, Inc., 2006. All rights reserved.  

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