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0806SQ-6N0GLC PDF预览

0806SQ-6N0GLC

更新时间: 2024-01-25 10:19:25
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
27页 1432K
描述
RF Power LDMOS Transistors

0806SQ-6N0GLC 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8504.50.80.00
风险等级:5.66型芯材料:AIR
直流电阻:0.006 Ω标称电感 (L):0.006 µH
电感器应用:RF INDUCTOR电感器类型:GENERAL PURPOSE INDUCTOR
JESD-609代码:e0功能数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C自谐振频率:0.0052 MHz
形状/尺寸说明:RECTANGULAR PACKAGE屏蔽:NO
表面贴装:YES端子面层:TIN LEAD
端子位置:DUAL ENDED端子形状:ONE SURFACE
测试频率:400 MHz容差:5%
Base Number Matches:1

0806SQ-6N0GLC 数据手册

 浏览型号0806SQ-6N0GLC的Datasheet PDF文件第2页浏览型号0806SQ-6N0GLC的Datasheet PDF文件第3页浏览型号0806SQ-6N0GLC的Datasheet PDF文件第4页浏览型号0806SQ-6N0GLC的Datasheet PDF文件第5页浏览型号0806SQ-6N0GLC的Datasheet PDF文件第6页浏览型号0806SQ-6N0GLC的Datasheet PDF文件第7页 
Document Number: AFT05MS031N  
Rev. 0, 6/2012  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
AFT05MS031NR1  
AFT05MS031GNR1  
Enhancement--Mode Lateral MOSFETs  
Designed for mobile two--way radio applications with frequencies from  
136 to 520 MHz. The high gain, ruggedness and broadband performance of  
these devices make them ideal for large--signal, common source amplifier  
applications in mobile radio equipment.  
136--520 MHz, 31 W, 13.6 V  
WIDEBAND  
RF POWER LDMOS TRANSISTORS  
Typical Performance: (13.6 Vdc, T = 25°C, CW)  
A
Frequency  
(MHz)  
G
η
P1dB  
(W)  
ps  
D
(dB)  
18.3  
17.7  
17.7  
(%)  
64.1  
62.0  
71.4  
(1,3)  
380--450  
31  
31  
33  
(2,3)  
450--520  
(4)  
520  
T O -- 2 7 0 -- 2  
PLASTIC  
Load Mismatch/Ruggedness  
AFT05MS031NR1  
Signal  
Type  
Frequency  
(MHz)  
P
(W)  
Test  
Voltage  
out  
VSWR  
Result  
(4)  
520  
CW  
>65:1 at all  
47  
17  
No Device  
Phase Angles  
(3 dB Overdrive)  
Degradation  
1. Measured in 380--450 MHz UHF wideband reference circuit.  
2. Measured in 450--520 MHz UHF wideband reference circuit.  
3. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
T O -- 2 7 0 -- 2 G U L L  
PLASTIC  
AFT05MS031GNR1  
4. Measured in 520 MHz narrowband test circuit.  
Features  
Characterized for Operation from 136 to 520 MHz  
Unmatched Input and Output Allowing Wide Frequency Range Utilization  
Integrated ESD Protection  
Integrated Stability Enhancements  
Wideband — Full Power Across the Band:  
136--174 MHz  
Gate  
Drain  
380--450 MHz  
450--520 MHz  
225°C Capable Plastic Package  
Exceptional Thermal Performance  
High Linearity for: TETRA, SSB, LTE  
Cost--effective Over--molded Plastic Packaging  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Typical Applications  
Output Stage VHF Band Mobile Radio  
Output Stage UHF Band Mobile Radio  
© Freescale Semiconductor, Inc., 2012. All rights reserved.  

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