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0806SQ-5N5GLC PDF预览

0806SQ-5N5GLC

更新时间: 2024-01-21 23:49:57
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
27页 1432K
描述
RF Power LDMOS Transistors

0806SQ-5N5GLC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:0705
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.13
大小写代码:0705构造:Rectangular
型芯材料:AIR直流电阻:0.0034 Ω
标称电感 (L):0.0055 µH电感器应用:RF INDUCTOR
电感器类型:GENERAL PURPOSE INDUCTORJESD-609代码:e1
功能数量:1端子数量:2
最高工作温度:145 °C最低工作温度:-40 °C
封装高度:1.397 mm封装长度:1.829 mm
封装形式:SMT封装宽度:1.346 mm
包装方法:TR最小质量因数(标称电感时):60
最大额定电流:2.9 A自谐振频率:4900 MHz
形状/尺寸说明:RECTANGULAR PACKAGE屏蔽:NO
表面贴装:YES端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子位置:DUAL ENDED端子形状:WRAPAROUND
测试频率:400 MHz容差:5%
Base Number Matches:1

0806SQ-5N5GLC 数据手册

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Document Number: AFT05MS031N  
Rev. 0, 6/2012  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
High Ruggedness N--Channel  
AFT05MS031NR1  
AFT05MS031GNR1  
Enhancement--Mode Lateral MOSFETs  
Designed for mobile two--way radio applications with frequencies from  
136 to 520 MHz. The high gain, ruggedness and broadband performance of  
these devices make them ideal for large--signal, common source amplifier  
applications in mobile radio equipment.  
136--520 MHz, 31 W, 13.6 V  
WIDEBAND  
RF POWER LDMOS TRANSISTORS  
Typical Performance: (13.6 Vdc, T = 25°C, CW)  
A
Frequency  
(MHz)  
G
η
P1dB  
(W)  
ps  
D
(dB)  
18.3  
17.7  
17.7  
(%)  
64.1  
62.0  
71.4  
(1,3)  
380--450  
31  
31  
33  
(2,3)  
450--520  
(4)  
520  
T O -- 2 7 0 -- 2  
PLASTIC  
Load Mismatch/Ruggedness  
AFT05MS031NR1  
Signal  
Type  
Frequency  
(MHz)  
P
(W)  
Test  
Voltage  
out  
VSWR  
Result  
(4)  
520  
CW  
>65:1 at all  
47  
17  
No Device  
Phase Angles  
(3 dB Overdrive)  
Degradation  
1. Measured in 380--450 MHz UHF wideband reference circuit.  
2. Measured in 450--520 MHz UHF wideband reference circuit.  
3. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
T O -- 2 7 0 -- 2 G U L L  
PLASTIC  
AFT05MS031GNR1  
4. Measured in 520 MHz narrowband test circuit.  
Features  
Characterized for Operation from 136 to 520 MHz  
Unmatched Input and Output Allowing Wide Frequency Range Utilization  
Integrated ESD Protection  
Integrated Stability Enhancements  
Wideband — Full Power Across the Band:  
136--174 MHz  
Gate  
Drain  
380--450 MHz  
450--520 MHz  
225°C Capable Plastic Package  
Exceptional Thermal Performance  
High Linearity for: TETRA, SSB, LTE  
Cost--effective Over--molded Plastic Packaging  
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Typical Applications  
Output Stage VHF Band Mobile Radio  
Output Stage UHF Band Mobile Radio  
© Freescale Semiconductor, Inc., 2012. All rights reserved.  

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