5秒后页面跳转
08051J0R4BBT PDF预览

08051J0R4BBT

更新时间: 2024-01-12 07:20:18
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
12页 126K
描述
Gallium Arsenide PHEMT RF Power Field Effect Transistor

08051J0R4BBT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:, 0805
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8532.25.00.55风险等级:5.65
其他特性:CAPACITANCE TOLERANCE IS 0.02 PICO FARAD电容:4e-7 µF
电容器类型:FILM CAPACITOR自定义功能:Consult Factory For .01pF Tolerance
介电材料:SILICON高度:0.93 mm
JESD-609代码:e3长度:2.01 mm
安装特点:SURFACE MOUNT负容差:5%
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C封装形状:RECTANGULAR PACKAGE
封装形式:SMT包装方法:TR
正容差:5%额定(直流)电压(URdc):100 V
系列:08051J(ACCU-P)尺寸代码:0805
表面贴装:YES温度系数:-/+30ppm/Cel ppm/ °C
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形状:WRAPAROUND
宽度:1.27 mmBase Number Matches:1

08051J0R4BBT 数据手册

 浏览型号08051J0R4BBT的Datasheet PDF文件第2页浏览型号08051J0R4BBT的Datasheet PDF文件第3页浏览型号08051J0R4BBT的Datasheet PDF文件第4页浏览型号08051J0R4BBT的Datasheet PDF文件第5页浏览型号08051J0R4BBT的Datasheet PDF文件第6页浏览型号08051J0R4BBT的Datasheet PDF文件第7页 
Document Number: MRFG35005MT1  
Rev. 3, 1/2006  
Freescale Semiconductor  
Technical Data  
Replaced by MRFG35005NT1. There are no form, fit or function changes with this part  
replacement. N suffix added to part number to indicate transition to lead-free  
terminations.  
MRFG35005MT1  
Gallium Arsenide PHEMT  
RF Power Field Effect Transistor  
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies  
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB  
linear base station applications.  
3.5 GHz, 4.5 W, 12 V  
POWER FET  
GaAs PHEMT  
Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,  
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A  
@ 0.01% Probability)  
Output Power — 450 mWatt  
Power Gain — 11 dB  
Efficiency — 25%  
4.5 Watts P1dB @ 3.55 GHz  
Excellent Phase Linearity and Group Delay Characteristics  
High Gain, High Efficiency and High Linearity  
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.  
CASE 466-03, STYLE 1  
PLD-1.5  
PLASTIC  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
Drain-Source Voltage  
V
15  
Vdc  
DSS  
(2)  
Total Device Dissipation @ T = 25°C  
P
10.5  
0.07  
W
W/°C  
C
D
(2)  
Derate above 25°C  
Gate-Source Voltage  
RF Input Power  
V
-5  
Vdc  
dBm  
°C  
GS  
P
30  
in  
Storage Temperature Range  
T
stg  
-65 to +150  
175  
(1)  
Channel Temperature  
T
ch  
°C  
Operating Case Temperature Range  
T
-20 to +85  
°C  
C
Table 2. Thermal Characteristics  
Characteristic  
Symbol  
Value  
Unit  
(2)  
Thermal Resistance, Junction to Case  
Class AB  
R
θ
JC  
14.2  
°C/W  
Table 3. Moisture Sensitivity Level  
Test Methodology  
Per JESD 22-A113, IPC/JEDEC J-STD-020  
Rating  
Package Peak Temperature  
Unit  
1
260  
°C  
1. For reliable operation, the operating channel temperature should not exceed 150°C.  
2. Simulated.  
Freescale Semiconductor, Inc., 2006. All rights reserved.  

与08051J0R4BBT相关器件

型号 品牌 描述 获取价格 数据表
08051J0R4BBTTR KYOCERA AVX Thin Film Capacitor

获取价格

08051J0R4BBTTR\500 KYOCERA AVX Thin Film Capacitor

获取价格

08051J0R4C4TTR KYOCERA AVX Thin Film Capacitor

获取价格

08051J0R4C4TTR\500 KYOCERA AVX Thin Film Capacitor

获取价格

08051J0R4CBTTR KYOCERA AVX Thin Film Capacitor

获取价格

08051J0R4CBTTR\500 KYOCERA AVX Thin Film Capacitor

获取价格