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0603CS-30NXJLW PDF预览

0603CS-30NXJLW

更新时间: 2024-02-04 01:59:08
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
18页 761K
描述
Enhancement Mode pHEMT Technology (E-pHEMT)

0603CS-30NXJLW 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:0603
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8504.50.80.00风险等级:5.28
大小写代码:0603构造:Rectangular
型芯材料:Ceramic直流电阻:0.22 Ω
标称电感 (L):0.03 µH电感器应用:RF INDUCTOR
电感器类型:GENERAL PURPOSE INDUCTOR功能数量:1
端子数量:2最高工作温度:155 °C
最低工作温度:-40 °C封装高度:1.02 mm
封装长度:1.8 mm封装形式:SMT
封装宽度:1.12 mm包装方法:TR, 7 Inch
最小质量因数(标称电感时):37最大额定电流:0.6 A
自谐振频率:2250 MHz形状/尺寸说明:RECTANGULAR PACKAGE
屏蔽:NO表面贴装:YES
端子面层:Silver/Palladium/Platinum - with Glass frit端子位置:DUAL ENDED
端子形状:WRAPAROUND测试频率:250 MHz
容差:5%

0603CS-30NXJLW 数据手册

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Document Number: MMG15241H  
Rev. 0, 12/2010  
Freescale Semiconductor  
Technical Data  
Enhancement Mode pHEMT  
Technology (E--pHEMT)  
MMG15241HT1  
High Linearity Amplifier  
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed  
in a SOT--89 standard plastic package. It is ideal for Cellular, PCS, LTE,  
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the  
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can  
be utilized as a driver amplifier in the transmit chain and as a second stage LNA  
in the receive chain.  
500--2800 MHz, 15.9 dB  
24 dBm  
Features  
E--pHEMT  
Frequency: 500--2800 MHz  
Noise Figure: 1.6 dB @ 2140 MHz  
P1dB: 24 dBm @ 2140 MHz  
Small--Signal Gain: 15.9 dB @ 2140 MHz  
Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz  
Single 5 Volt Supply  
Supply Current: 85 mA  
CASE 2142--01  
SOT--89A  
50 Ohm Operation (some external matching required)  
Low Cost SOT--89 Surface Mount Package  
RoHS Compliant  
PLASTIC  
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
900  
Symbol MHz  
2140 2600  
Characteristic  
MHz  
MHz Unit  
V
6
130  
DD  
DD  
Noise Figure  
NF  
1.2  
1.6  
1.3  
dB  
dB  
Supply Current  
I
mA  
dBm  
°C  
Input Return Loss  
(S11)  
IRL  
-- 11 . 8 --21.3 --16.9  
RF Input Power  
P
13  
in  
Storage Temperature Range  
T
stg  
--65 to +150  
150  
Output Return Loss  
(S22)  
ORL  
--13.4 --16.2 --20.9  
dB  
dB  
(2)  
Junction Temperature  
T
J
°C  
2. For reliable operation, the junction temperature should not  
Small--Signal Gain  
(S21)  
G
20.5  
24  
15.9  
24  
14.4  
24  
p
exceed 150°C.  
Power Output @  
1dB Compression  
P1db  
IIP3  
dBm  
Third Order Input  
Intercept Point  
18.2  
38.7  
23.5  
39.4  
26.2 dBm  
40.6 dBm  
Third Order Output  
Intercept Point  
OIP3  
1. V = 5 Vdc, T = 25°C, 50 ohm system, application circuit tuned  
DD  
A
for specified frequency.  
Table 3. Thermal Characteristics  
(3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
59  
°C/W  
JC  
Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2010. All rights reserved.  

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