PRELIMINARY
FPD7612P70
HI-FREQUENCY PACKAGED PHEMT
• PERFORMANCE
♦ 20 dBm Output Power (P1dB
)
♦ 21 dB Power Gain (G1dB) at 1.85 GHz
♦ 0.7 dB Noise Figure at 1.85 GHz
♦ 30 dBm Output IP3
♦ 50% Power-Added Efficiency at 1.85 GHz
♦ Useable Gain to 24 GHz
♦ Evaluation Boards Available
GATE LEAD IS ANGLED
• DESCRIPTION AND APPLICATIONS
The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. . The FPD7612 is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 26 GHz.
• ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL (except as noted)
Power at 1dB Gain Compression
Gain at 1dB Gain Compression
Power-Added Efficiency
P1dB
SSG
PAE
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
20
21
45
dBm
dB
%
V
DS = 5 V; IDS = 50% IDSS
;
P
OUT = P1dB
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 18 GHz
Noise Figure
Output Third-Order Intercept Point
MSG
V
DS = 5 V; IDS = 50% IDSS
14
10
0.7
30
NF
IP3
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
dB
dBm
P
OUT = 9 dBm SCL
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
45
60
120
80
1
0.9
14
75
mA
mA
mS
µA
V
V
V
°C/W
10
1.3
0.7
12
14.5
|VBDGS
|VBDGD
|
|
IGD = 0.2 mA
16
335
V
DS > 3V
θJC
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtrionic.co.uk/semis
Revised: 7/15/05
Email: sales@filcsi.com