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FMS2016-001-EB PDF预览

FMS2016-001-EB

更新时间: 2024-01-10 19:51:04
品牌 Logo 应用领域
FILTRONIC 开关
页数 文件大小 规格书
6页 232K
描述
High Power Reflective GaAs SP4T Switch

FMS2016-001-EB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:3 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, QFN-12
Reach Compliance Code:unknown风险等级:5.82
其他特性:HIGH ISOLATION特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):45.8 dBm
最大插入损耗:0.85 dB最小隔离度:26 dB
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:12
最高工作温度:100 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC12,.12SQ,20
端口终止:REFLECTIVE射频/微波设备类型:SP4T
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Matte Tin (Sn) - annealed

FMS2016-001-EB 数据手册

 浏览型号FMS2016-001-EB的Datasheet PDF文件第2页浏览型号FMS2016-001-EB的Datasheet PDF文件第3页浏览型号FMS2016-001-EB的Datasheet PDF文件第4页浏览型号FMS2016-001-EB的Datasheet PDF文件第5页浏览型号FMS2016-001-EB的Datasheet PDF文件第6页 
FMS2016-001  
Datasheet v2.4  
High Power Reflective GaAs SP4T Switch  
FEATURES:  
FUNCTIONAL SCHEMATIC:  
3x3x0.9mm Packaged pHEMT Switch  
ANT  
High isolation: >30dB at 1.8GHz  
Low Insertion loss: 0.65dB at 1.8GHz  
Excellent low control voltage performance  
Excellent harmonic performance under  
GSM/DCS/PCS/EDGE power levels  
RoHS Compliant (Directive 2002/95/EC)  
RF1  
RF3  
RF2  
RF4  
GENERAL DESCRIPTION:  
The FMS2016-001 is a low loss, high power and  
linear single pole four throw Gallium Arsenide  
antenna switch designed for use in mobile handset  
and other high power switching applications. The  
die is fabricated using the Filtronic FL05 0.5μm  
switch process technology, which offers excellent  
performance optimised for switch applications.  
TYPICAL APPLICATIONS:  
.
Multi-band GSM/DCS/PCS/EDGE handset  
modules  
High power and linear RF switching  
applications  
ELECTRICAL SPECIFICATIONS:  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
0.55  
0.65  
0.75  
0.85  
dB  
dB  
Insertion Loss  
Return Loss  
0.5 – 2.5 GHz  
16  
30  
26  
20  
dB  
Isolation  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
34  
32  
dB  
dB  
RF1 – RF2, RF1 – RF3, RF2 – RF4  
Isolation  
0.5 – 1.0 GHz  
1.0 – 2.0 GHz  
34  
30  
dB  
dB  
RF3 – RF4  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
2 GHz, Pin = +35 dBm, 100% Duty Cycle  
-75  
-75  
-60  
-65  
dBc  
dBc  
2nd Harmonic Level  
3rd Harmonic Level  
1 GHz, Pin = +35 dBm, 100% Duty Cycle  
2 GHz, Pin = +35 dBm, 100% Duty Cycle  
-75  
-75  
-60  
-65  
dBc  
dBc  
Switching speed : Trise, Tfall  
Ton, Toff  
10% to 90% RF and 90% to 10% RF  
μs  
μs  
<0.3  
<10  
50% control to 90% RF and 50% control to 10% RF  
0.5  
15  
Control Current  
IP3  
+35dBm RF input @1GHz  
μA  
0.9 & 0.91 GHz, Pin = +20 dBm  
1.85 & 1.86 GHz, Pin = +20 dBm  
>68  
>66  
dBm  
dBm  
1.0GHz  
2.0GHz  
>38  
>37  
dBm  
dBm  
P0.1dB  
Note:  
TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω  
External DC blocking capacitors are required on all RF ports (typ: 47pF)  
1
Specifications subject to change without notice  
Filtronic Compound Semiconductors Ltd  
Tel: +44 (0) 1325 301111  
Fax: +44 (0) 1325 306177  
Email: sales@filcs.com  
Website: www.filtronic.com  

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