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KSD882O PDF预览

KSD882O

更新时间: 2024-02-05 23:36:17
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管功率放大器局域网
页数 文件大小 规格书
5页 51K
描述
Audio Frequency Power Amplifier

KSD882O 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.67
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):90 MHzBase Number Matches:1

KSD882O 数据手册

 浏览型号KSD882O的Datasheet PDF文件第2页浏览型号KSD882O的Datasheet PDF文件第3页浏览型号KSD882O的Datasheet PDF文件第4页浏览型号KSD882O的Datasheet PDF文件第5页 
KSD882  
Audio Frequency Power Amplifier  
Low Speed Switching  
Complement to KSB772  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector- Base Voltage  
Collector-Emitter Voltage  
Emitter- Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
40  
V
V
CBO  
CEO  
EBO  
30  
V
5
V
I
I
I
3
A
C
7
A
CP  
B
0.6  
A
P
Collector Dissipation (T =25°C)  
10  
1
W
W
°C  
°C  
C
C
P
Collector Dissipation (T =25°C)  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
*DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
Units  
µA  
I
V
V
= 30V, I = 0  
1
1
CBO  
CB  
EB  
E
I
= 3V, I = 0  
µA  
EBO  
C
h
h
V
V
= 2V, I = 20mA  
30  
60  
150  
160  
FE1  
CE  
CE  
C
= 2V, I = 1A  
400  
0.5  
2.0  
FE2  
C
V
V
(sat)  
(sat)  
*Collector-Emitter Saturation Voltage  
*Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= 2A, I = 0.2A  
0.3  
1.0  
90  
V
V
CE  
C
C
B
= 2A, I = 0.2A  
BE  
B
f
V
= 5V, I = 0.1A  
MHz  
pF  
T
CE  
E
C
V
= 10V, I = 0  
45  
ob  
CB  
E
f = 1MHz  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classificntion  
FE  
Classification  
R
O
Y
G
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
200 ~ 400  
FE2  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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