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J105L34Z PDF预览

J105L34Z

更新时间: 2024-01-26 17:33:29
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
12页 718K
描述
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92, 3 PIN

J105L34Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.63配置:SINGLE
最大漏源导通电阻:3 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):35 pFJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

J105L34Z 数据手册

 浏览型号J105L34Z的Datasheet PDF文件第2页浏览型号J105L34Z的Datasheet PDF文件第3页浏览型号J105L34Z的Datasheet PDF文件第4页浏览型号J105L34Z的Datasheet PDF文件第5页浏览型号J105L34Z的Datasheet PDF文件第6页浏览型号J105L34Z的Datasheet PDF文件第7页 
J105  
J106  
J107  
JFTJ105  
G
D
G
S
SOT-223  
TO-92  
G
S
NOTE: Source & Drain  
are interchangeable  
D
N-Channel Switch  
This device is designed for analog or digital switching applications where  
very low On Resistance is mandatory. Sourced from Process 59.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VDG  
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
- 25  
10  
V
V
VGS  
IGF  
mA  
5
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
J105 - 107  
JFTJ105  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
125  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
357  
125  
°C/W  
1997 Fairchild Semiconductor Corporation  

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