J105
J106
J107
JFTJ105
G
D
G
S
SOT-223
TO-92
G
S
NOTE: Source & Drain
are interchangeable
D
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
25
- 25
10
V
V
VGS
IGF
mA
5
Operating and Storage Junction Temperature Range
-55 to +150
C
°
TJ, Tstg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
J105 - 107
JFTJ105
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
625
5.0
125
1,000
8.0
mW
mW/°C
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Ambient
357
125
°C/W
1997 Fairchild Semiconductor Corporation