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IRLI610A PDF预览

IRLI610A

更新时间: 2024-02-01 16:01:09
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲
页数 文件大小 规格书
7页 238K
描述
ADVANCED POWER MOSFET

IRLI610A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-262AA包装说明:I2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.33
雪崩能效等级(Eas):29 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):3.3 A
最大漏极电流 (ID):3.3 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):33 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRLI610A 数据手册

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IRLW/I610A  
FEATURES  
BVDSS = 200 V  
RDS(on) = 1.5Ω  
ID = 3.3 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
D2-PAK  
I2-PAK  
150 C Operating Temperature  
°
2
Lower Leakage Current: 10 A (Max.) @ VDS = 200V  
µ
Lower RDS(ON): 1.185 (Typ.)  
1
1
2
3
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
200  
3.3  
Units  
VDSS  
Drain-to-Source Voltage  
V
Continuous Drain Current (TC=25°C)  
Continuous Drain Current (TC=100°C)  
Drain Current-Pulsed  
ID  
A
2.1  
IDM  
VGS  
EAS  
IAR  
(1)  
12  
A
V
Gate-to-Source Voltage  
20  
±
(2)  
(1)  
(1)  
(3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
29  
mJ  
A
3.3  
3.3  
5
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
*
Total Power Dissipation (TA=25°C)  
Total Power Dissipation (TC=25°C)  
Linear Derating Factor  
3.1  
33  
PD  
W
0.26  
W/°C  
Operating Junction and  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
°C  
Maximum Lead Temp. for Soldering  
Purposes, 1/8 from case for 5-seconds  
TL  
Thermal Resistance  
Symbol  
RθJC  
Characteristic  
Typ.  
Max.  
Units  
Junction-to-Case  
--  
--  
--  
3.81  
40  
RθJA  
*
Junction-to-Ambient  
Junction-to-Ambient  
°C/W  
RθJA  
62.5  
When mounted on the minimum pad size recommended (PCB Mount).  
*
Rev. B  
©1999 Fairchild Semiconductor Corporation  
1

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