是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 4.7 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRFU110ATU | ROCHESTER | 4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 |
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IRFU110PBF | VISHAY | Power MOSFET |
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IRFU110PBF | KERSEMI | Dynamic dV/dt Rating Repetitive Avalanche Rated |
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IRFU110TU | FAIRCHILD | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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IRFU111 | INFINEON | Power Field-Effect Transistor, 4.7A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Met |
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IRFU120 | VISHAY | IRFR120 |
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