5秒后页面跳转
1N5237B.TR PDF预览

1N5237B.TR

更新时间: 2024-01-23 04:17:38
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管测试
页数 文件大小 规格书
3页 26K
描述
DIODE 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2, Voltage Regulator Diode

1N5237B.TR 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS, MLL34, MELF-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:8.2 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:20%工作测试电流:20 mA
Base Number Matches:1

1N5237B.TR 数据手册

 浏览型号1N5237B.TR的Datasheet PDF文件第2页浏览型号1N5237B.TR的Datasheet PDF文件第3页 
1N5226B - 1N5257B Series Half Watt Zeners  
Tolerance: B = 5%  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Parameter  
Value  
Units  
Storage Temperature Range  
-65 to +200  
+ 200  
°C  
°C  
°C  
Maximum Junction Operating Temperature  
Lead Temperature (1/16” from case for 10 seconds)  
+ 230  
Total Device Dissipation  
Derate above 75°C  
Surge Power**  
500  
4.0  
10  
mW  
mW/°C  
W
*These ratings are limiting values above which the serviceability of the diode may be impaired.  
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.  
DO-35  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed  
or low duty cycle operations.  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
VZ  
(V)  
ZZ  
()  
IZT  
(mA)  
ZZK  
()  
IZK  
(mA)  
VR  
(V)  
IR  
(µA)  
TC  
(%/°C)  
@
@
@
Device  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.0  
6.2  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
28  
24  
23  
22  
19  
17  
11  
7.0  
7.0  
5.0  
6.0  
8.0  
8.0  
10  
17  
22  
30  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
1,600  
1,700  
1,900  
2,000  
1,900  
1,600  
1,600  
1,600  
1,000  
750  
500  
500  
600  
600  
600  
600  
600  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
3.0  
3.5  
4.0  
5.0  
6.0  
6.5  
6.5  
7.0  
8.0  
8.4  
9.1  
25  
15  
10  
- 0.07  
- 0.065  
- 0.06  
+/- 0.055  
+/- 0.03  
+/- 0.3  
0.038  
0.038  
0.045  
0.05  
0.058  
0.062  
0.065  
0.068  
0.075  
0.076  
0.077  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5241B  
1N5242B  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
3.0  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
1.0  
11  
12  
Foward Voltage = 1.1 V Maximum @ IF = 200 mA for all 1N5200 series  
VF  
NOTE: National preferred devices in BOLD  
1997 Fairchild Semiconductor Corporation  
1N5200B Rev. A  

与1N5237B.TR相关器件

型号 品牌 描述 获取价格 数据表
1N5237B116 NXP DIODE 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regula

获取价格

1N5237B136 NXP DIODE 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regula

获取价格

1N5237B153 NXP DIODE 8.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, Voltage Regula

获取价格

1N5237B-1TR MICROSEMI Zener Diode, 8.2V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLA

获取价格

1N5237B-A DIODES 500mW EPITAXIAL ZENER DIODE

获取价格

1N5237B-A MCC Zener Diode, 8.2V V(Z), 5%, 0.5W,

获取价格