1N5230B

更新时间： 2024-02-17 03:18:48

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Absolute Maximum Ratings

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1N5230B 数据手册

1N5226B - 1N5257B Series Half Watt Zeners

Tolerance: B = 5%

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Parameter

Value

Units

Storage Temperature Range

-65 to +200

+ 200

°C

Maximum Junction Operating Temperature

Lead Temperature (1/16” from case for 10 seconds)

+ 230

Total Device Dissipation

Derate above 75°C

Surge Power**

500

4.0

mW/°C

*These ratings are limiting values above which the serviceability of the diode may be impaired.

**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.

DO-35

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed

or low duty cycle operations.

Electrical Characteristics

TA = 25°C unless otherwise noted

V_Z

(V)

Z_Z

(Ω)

I_ZT

(mA)

Z_ZK

(Ω)

I_ZK

(mA)

V_R

(V)

I_R

(µA)

T_C

(%/°C)

Device

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1

7.0

5.0

6.0

8.0

1,600

1,700

1,900

2,000

1,900

1,600

1,000

750

500

600

0.25

1.0

2.0

3.0

3.5

4.0

5.0

6.0

6.5

7.0

8.0

8.4

9.1

- 0.07

- 0.065

- 0.06

+/- 0.055

+/- 0.03

+/- 0.3

0.038

0.045

0.05

0.058

0.062

0.065

0.068

0.075

0.076

0.077

1N5226B

1N5227B

1N5228B

1N5229B

1N5230B

1N5231B

1N5232B

1N5233B

1N5234B

1N5235B

1N5236B

1N5237B

1N5238B

1N5239B

1N5240B

1N5241B

1N5242B

5.0

3.0

2.0

1.0

Foward Voltage = 1.1 V Maximum @ I_F= 200 mA for all 1N5200 series

V_F

NOTE: National preferred devices in BOLD

1997 Fairchild Semiconductor Corporation

1N5200B Rev. A

12 3

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