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FZ1800R12KL4C PDF预览

FZ1800R12KL4C

更新时间: 2024-02-21 00:18:53
品牌 Logo 应用领域
EUPEC 晶体晶体管局域网
页数 文件大小 规格书
8页 103K
描述
Hochstzulassige Werte / Maximum rated values

FZ1800R12KL4C 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.6外壳连接:ISOLATED
最大集电极电流 (IC):2850 A集电极-发射极最大电压:1200 V
配置:PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODEJESD-30 代码:R-XUFM-X9
元件数量:3端子数量:9
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICONBase Number Matches:1

FZ1800R12KL4C 数据手册

 浏览型号FZ1800R12KL4C的Datasheet PDF文件第2页浏览型号FZ1800R12KL4C的Datasheet PDF文件第3页浏览型号FZ1800R12KL4C的Datasheet PDF文件第4页浏览型号FZ1800R12KL4C的Datasheet PDF文件第5页浏览型号FZ1800R12KL4C的Datasheet PDF文件第6页浏览型号FZ1800R12KL4C的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FZ 1800 R 12 KL4C  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
1200  
V
T
C = 80 °C  
IC,nom.  
IC  
1800  
2850  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
3600  
11,4  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
1800  
3600  
590  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
kA2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
2,5  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
C = 1800A, VGE = 15V, Tvj = 25°C  
VCE sat  
-
-
2,1  
2,4  
2,6  
2,9  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
IC = 1800A, VGE = 15V, Tvj = 125°C  
Gate-Schwellenspannung  
gate threshold voltage  
IC = 72mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
4,5  
5,5  
19,5  
135  
9
6,5  
V
Gateladung  
gate charge  
VGE = -15V...+15V  
QG  
-
-
-
-
-
-
µC  
nF  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
ICES  
VCE = 1200V, VGE = 0V, Tvj = 25°C  
-
-
0,05  
4
2
-
mA  
mA  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
VCE = 1200V, VGE = 0V, Tvj = 125°C  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
600  
nA  
prepared by: Mark Münzer  
approved by: M. Hierholzer  
date of publication: 02.09.1999  
revision: 2  
1(8)  
Seriendatenblatt_FZ1800R12KL4C  

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