Technische Information / technical information
IGBT-Module
IGBT-modules
FS6R06VE3_B2
IGBT-Wechselrichter / IGBT-inverter
Vorläufige Daten / preliminary data
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
600
V
Kollektor-Dauergleichstrom
DC-collector current
T† = 80°C, TÝÎ = 175°C
T† = 25°C, TÝÎ = 175°C
I† ÒÓÑ
I†
6
11
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
I†ç¢
PÚÓÚ
12
A
W
V
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 175°C
40,5
+/-20
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 6 A, V•Š = 15 V
I† = 6 A, V•Š = 15 V
I† = 6 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C V†Š ÙÈÚ
TÝÎ = 150°C
1,55 2,00
1,70
1,80
V
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 0,20 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
V•ŠÚÌ
Q•
4,9
5,8
0,06
0,0
6,5
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
0,33
0,01
nF
nF
mA
nA
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
1,0
Gate-Emitter Reststrom
gate-emitter leakage current
400
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 6 A, V†Š = 300 V
V•Š = ±15 V
R•ÓÒ = 47 Â
TÝÎ = 25°C
tÁ ÓÒ
0,012
0,012
0,012
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 6 A, V†Š = 300 V
V•Š = ±15 V
R•ÓÒ = 47 Â
TÝÎ = 25°C
tØ
0,009
0,013
0,014
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 6 A, V†Š = 300 V
V•Š = ±15 V
R•ÓËË = 47 Â
TÝÎ = 25°C
tÁ ÓËË
0,10
0,12
0,125
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
I† = 6 A, V†Š = 300 V
V•Š = ±15 V
R•ÓËË = 47 Â
TÝÎ = 25°C
tË
0,085
0,13
0,135
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 6 A, V†Š = 300 V
V•Š = ±15 V, L» = 100 nH
R•ÓÒ = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
0,09
0,12
0,13
mJ
mJ
mJ
EÓÒ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 6 A, V†Š = 300 V
V•Š = ±15 V, L» = 100 nH
R•ÓËË = 47 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
0,14
0,18
0,19
mJ
mJ
mJ
EÓËË
Kurzschlussverhalten
SC data
t« ù 6 µs, V•Š ù 15 V
TÝÎ = 150°C, V†† = 360 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
30
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
RÚÌœ†
3,30 3,70 K/W
1,30 K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
RÚ̆™
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: Peter Kanschat
approved by: Ralf Keggenhoff
date of publication: 2004-10-8
revision: 2.0
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