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FLM7785-18F PDF预览

FLM7785-18F

更新时间: 2024-01-02 09:22:23
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其他 - ETC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 302K
描述
C-Band Internally Matched FET

FLM7785-18F 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.15其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:15 V最大漏极电流 (ID):5.8 A
FET 技术:JUNCTION最高频带:C BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2工作模式:DEPLETION MODE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLM7785-18F 数据手册

 浏览型号FLM7785-18F的Datasheet PDF文件第2页浏览型号FLM7785-18F的Datasheet PDF文件第3页浏览型号FLM7785-18F的Datasheet PDF文件第4页 
FLM7785-18F  
C-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 42.5dBm (Typ.)  
1dB  
• High Gain: G  
= 7.0dB (Typ.)  
1dB  
= 29% (Typ.)  
• High PAE: η  
add  
• Low IM = -45dBc@Po = 31.5dBm  
3
• Broad Band: 7.7 ~ 8.5GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed  
DESCRIPTION  
The FLM7785-18F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
83.3  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 18.0 and -8.4 mA respectively with  
gate resistance of 25.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
8.1 12.75  
A
DS  
DS  
DS  
DSS  
g
m
-
= 5V, I  
= 5100mA  
-
4350  
mS  
V
DS  
Pinch-off Voltage  
V
p
= 5V, I  
DS  
= -450µA  
= 450mA  
-1.0  
-5  
-2.0 -3.5  
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
-
-
V
GSO  
GS  
P
1dB  
41.5 42.5  
-
-
dBm  
dB  
V
= 10V,  
DS  
G
6.0  
7.0  
1dB  
I
= 0.55 I  
DS  
DSS (Typ.),  
f = 7.7 ~ 8.5 GHz,  
Z =Z = 50 ohm  
I
-
-
-
4700 5800  
mA  
%
dsr  
η
S
L
Power-added Efficiency  
Gain Flatness  
add  
29  
-
-
G  
0.6  
dB  
f = 8.5 GHz, f = 10 MHz  
3rd Order Intermodulation  
Distortion  
2-Tone Test  
IM  
3
-42  
-45  
-
dBc  
P
= 31.5dBm S.C.L.  
out  
Channel to Case  
R
Thermal Resistance  
Channel Temperature Rise  
CASE STYLE: IK  
-
-
1.6  
-
1.8  
80  
°C/W  
°C  
th  
T  
10V x I  
x R  
th  
ch  
dsr  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.2  
August 2004  
1

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