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1N5553 PDF预览

1N5553 - ETC

二极管局域网
型号:
1N5553
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This specification covers the performance requirements for silicon, general purpose,
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二极管局域网
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28页 / 202K
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品牌名称:
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1N5553

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生命周期
Transferred
Reach Compliance Code
unknown
风险等级
5.63
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JESD-30 代码
O-LALF-W2
元件数量
1
相数
1
端子数量
2
最大输出电流
5 A
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大反向电流
1 µA
最大反向恢复时间
0.002 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
INCH-POUND
MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25°C and ratings apply to all case outlines.
Col. 1
Type
Col. 2
V
(BR)
Col. 3
V
RWM
and
V
(BR)min
Col. 4
I
O1
T
L
= +55°C;
L = .375 inch
(1) (2) (3)
A dc
5
5
5
5
5
Col. 5
I
FSM
I
O
= 2 A dc
t
p
= 1/120 s
T
A
= +55°C
A(pk)
100
100
100
100
100
Col. 6
T
J
Col. 7
I
O2
T
A
=
+55°C
(2) (4)
A dc
3
3
3
3
3
Col. 8
T
STG
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
V dc
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
200
400
600
800
1,000
200
400
600
800
1,000
°C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
°C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
(1) Derate linearly at 41.6 mA/°C above T
L
= +55°C at L = .375 inch (9.53 mm).
(2) An I
O
of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554
- 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/°C above T
A
= +55°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconduction@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961

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