Datasheet > 0105-12

0105-12

更新时间： 2024-01-18 16:39:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	151K
描述
TRANSISTOR \| BJT \| NPN \| 55V V(BR)CEO \| 1.4A I(C) \| SOT-161VAR

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0105-12 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	1.4 A	配置：	Single
最小直流电流增益 (hFE)：	10	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	22 W
子类别：	Other Transistors	表面贴装：	NO

0105-12 数据手册

0105 - 12

12 Watts, 28 Volts, Class AB

Defcom 100 - 500 MHz

CASE OUTLINE

55CU, Style 2

GENERAL DESCRIPTION

The 0105-12 is a double input matched COMMON EMITTER broadband

transistor specifically intended for use in the 100-500 MHz frequency band. It

may be operated in Class AB or C. Gold metallization and silicon diffused

resistors ensure ruggedness and high reliability.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

22 Watts

Maximum Voltage and Current

BVces Collector to Emiter Voltage

BVebo Emitter to Base Voltage

55 Volts

4.0 Volts

1.4 A

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to +150^oC

+200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

Power Output

Power Input

Power Gain

Efficiency

Load Mismatch Tolerance

F = 500 MHz

Vcc = 28 Volts

Watts

1.2

2.0

7.8

ηc

VSWR

20:1

BVebo

BVces

BVceo

Cob

Emitter to Base Breakdown

Collector to Emitter Breakdown

Output Capacitance

DC - Current Gain

Thermal Resistance

Ie = 5 mA

Ic = 20 mA

Ie = 50 mA

Vcb = 28 V, F = 1 MHz

Vce = 5 V, Ic = 100 A

4.0

Volts

9.0

h_FE

8.0

^oC/W

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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