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EBE11FD8AGFN-6E-E PDF预览

EBE11FD8AGFN-6E-E

更新时间: 2024-02-21 07:26:30
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
22页 189K
描述
1GB Fully Buffered DIMM

EBE11FD8AGFN-6E-E 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:DIMM,针数:240
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
Is Samacsys:N访问模式:DUAL BANK PAGE BURST
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-XDMA-N240
内存密度:9663676416 bit内存集成电路类型:DDR DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:240
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:组织:128MX72
封装主体材料:UNSPECIFIED封装代码:DIMM
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
认证状态:Not Qualified自我刷新:YES
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:NO
技术:CMOS温度等级:OTHER
端子形式:NO LEAD端子位置:DUAL
Base Number Matches:1

EBE11FD8AGFN-6E-E 数据手册

 浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第2页浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第3页浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第4页浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第5页浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第6页浏览型号EBE11FD8AGFN-6E-E的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
1GB Fully Buffered DIMM  
EBE11FD8AGFD  
EBE11FD8AGFN  
Features  
Specifications  
Density: 1GB  
JEDEC standard Raw Card B Design  
Organization  
Industry Standard Advanced Memory Buffer (AMB)  
128M words × 72 bits, 2 ranks  
High-speed differential point-to-point link interface at  
1.5V (JEDEC draft spec)  
Mounting 18 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
14 north-bound (NB) high speed serial lanes  
10 south-bound (SB) high speed serial lanes  
Various features/modes:  
Package  
240-pin fully buffered, socket type dual in line  
memory module (FB-DIMM)  
MemBIST and IBIST test functions  
PCB height: 30.35mm  
Transparent mode and direct access mode for  
DRAM testing  
Lead pitch: 1.00mm  
Advanced Memory Buffer (AMB): 655-ball FCBGA  
Lead-free (RoHS compliant)  
Interface for a thermal sensor and status indicator  
Channel error detection and reporting  
Power supply  
Automatic DDR2 SDRAM bus and channel  
calibration  
DDR2 SDRAM: VDD = 1.8V ± 0.1V  
AMB: VCC = 1.5V + 0.075V/0.045  
Data rate: 667Mbps/533Mbps (max.)  
SPD (serial presence detect) with 1piece of 256 byte  
serial EEPROM  
Four internal banks for concurrent operation  
(components)  
Note: Warranty void if removed DIMM heat  
spreader.  
Interface: SSTL_18  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
Precharge: auto precharge option for each burst  
access  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Performance  
FB-DIMM  
DDR2 SDRAM  
System clock  
frequency  
Peak channel  
throughput  
Speed grade  
PC2-5300F  
PC2-4200F  
FB-DIMM link data rate  
4.0Gbps  
Speed Grade  
DDR data rate  
667Mbps  
167MHz  
133MHz  
8.0GByte/s  
6.4GByte/s  
DDR2-667 (5-5-5)  
DDR2-533 (4-4-4)  
3.2Gbps  
533Mbps  
Document No. E0867E20 (Ver. 2.0)  
Date Published August 2006 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2006  

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