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EBE10AD4AGFA-4A-E PDF预览

EBE10AD4AGFA-4A-E

更新时间: 2024-02-23 07:17:12
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器双倍数据速率时钟
页数 文件大小 规格书
23页 199K
描述
1GB Registered DDR2 SDRAM DIMM

EBE10AD4AGFA-4A-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DIMM包装说明:DIMM, DIMM240,40
针数:240Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.36
风险等级:5.84访问模式:SINGLE BANK PAGE BURST
最长访问时间:0.6 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):400 MHzI/O 类型:COMMON
JESD-30 代码:R-XDMA-N240内存密度:9663676416 bit
内存集成电路类型:DDR DRAM MODULE内存宽度:72
功能数量:1端口数量:1
端子数量:240字数:134217728 words
字数代码:128000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:128MX72输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM240,40封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192自我刷新:YES
最大待机电流:0.62 A子类别:Other Memory ICs
最大压摆率:5.77 mA最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:NO技术:CMOS
温度等级:OTHER端子形式:NO LEAD
端子节距:1 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

EBE10AD4AGFA-4A-E 数据手册

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PRELIMINARY DATA SHEET  
1GB Registered DDR2 SDRAM DIMM  
EBE10AD4AGFA (128M words × 72 bits, 1 Rank)  
Specifications  
Features  
Density: 1GB  
Double-data-rate architecture; two data transfers per  
clock cycle  
Organization  
The high-speed data transfer is realized by the 4 bits  
prefetch pipelined architecture  
128M words × 72 bits, 1 rank  
Mounting 18 pieces of 512M bits DDR2 SDRAM  
sealed in FBGA  
Bi-directional differential data strobe (DQS and /DQS)  
is transmitted/received with data for capturing data at  
the receiver  
Package: 240-pin socket type dual in line memory  
module (DIMM)  
DQS is edge-aligned with data for READs; center-  
aligned with data for WRITEs  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
Differential clock inputs (CK and /CK)  
Lead-free (RoHS compliant)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Power supply: VDD = 1.8V ± 0.1V  
Data rate: 667Mbps/533Mbps/400Mbps (max.)  
Commands entered on each positive CK edge; data  
referenced to both edges of DQS  
Four internal banks for concurrent operation  
(components)  
Posted /CAS by programmable additive latency for  
better command and data bus efficiency  
Interface: SSTL_18  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
Burst lengths (BL): 4, 8  
/CAS Latency (CL): 3, 4, 5  
/DQS can be disabled for single-ended Data Strobe  
operation  
Precharge: auto precharge option for each burst  
access  
1 piece of PLL clock driver, 2 pieces of register driver  
and 1 piece of serial EEPROM (2K bits EEPROM) for  
Presence Detect (PD)  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 8192 cycles/64ms  
Average refresh period  
7.8µs at 0°C TC ≤ +85°C  
3.9µs at +85°C < TC ≤ +95°C  
Operating case temperature range  
TC = 0°C to +95°C  
Document No. E0865E11 (Ver. 1.1)  
Date Published February 2006 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2006  

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