SILICON BRIDGE RECTIFIERS
WOB
W005 - W10
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
FEATURES :
0.18 (4.57)
AC
+
-
1.00 (25.4)
MIN.
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
0.034 (0.86)
0.028 (0.71)
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
-
AC
+
0.22 (5.59)
0.18 (4.57)
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
AC
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
* Weight : 1.29 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
W005 W01
W02
W04
W06
W08
W10
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Current
0.375" (9.5 mm) lead length
IF(AV)
1.5
50
A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
IFSM
A
I2t
VF
IR
A2S
V
10
1.0
10
Maximum Forward Voltage per Diode at IF = 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
IR(H)
CJ
1.0
14
mA
pf
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
36
°C/W
RqJA
TJ
- 50 to + 150
- 50 to + 150
C
°
TSTG
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
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Rev. 02 : March 25, 2005