W01

更新时间： 2024-01-14 03:57:26

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	46K
描述
SILICON BRIDGE RECTIFIERS

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

W01 技术参数

生命周期：	Active	包装说明：	O-PBCY-W4
Reach Compliance Code：	unknown	风险等级：	5.59
Is Samacsys：	N	最小击穿电压：	50 V
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	O-PBCY-W4
最大非重复峰值正向电流：	50 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	125 °C	最低工作温度：	-55 °C
最大输出电流：	1.5 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
最大重复峰值反向电压：	50 V	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
Base Number Matches：	1

W01 数据手册

SILICON BRIDGE RECTIFIERS

WOB

W005 - W10

PRV : 50 - 1000 Volts

Io : 1.5 Ampere

0.39 (10.0)

0.31 (7.87)

0.22 (5.59)

FEATURES :

0.18 (4.57)

1.00 (25.4)

MIN.

* High case dielectric strength

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

0.034 (0.86)

0.028 (0.71)

* Ideal for printed circuit board

* Pb / RoHS Free

MECHANICAL DATA :

0.22 (5.59)

0.18 (4.57)

* Case : Reliable low cost construction

utilizing molded plastic technique

* Epoxy : UL94V-O rate flame retardant

* Terminals : Plated leads solderable per

MIL-STD-202, Method 208 guaranteed

* Polarity : Polarity symbols marked on case

* Mounting position : Any

0.22 (5.59)

0.18 (4.57)

Dimension in inches and (millimeter)

* Weight : 1.29 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

W005 W01

W02

W04

W06

W08

W10

RATING

SYMBOL

UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

V^RMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Current

0.375" (9.5 mm) lead length

IF(AV)

1.5

Peak Forward Surge Current Single half sine wave

Superimposed on rated load (JEDEC Method)

Rating for fusing ( t < 8.3 ms. )

IFSM

I²t

I^R

A²S

1.0

Maximum Forward Voltage per Diode at IF = 1.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 °C

IR(H)

C^J

1.0

Ta = 100 °C

Typical Junction Capacitance per Diode (Note 1)

Typical Thermal Resistance (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

°C/W

RqJA

T^J

- 50 to + 150

TSTG

°C

Notes :

1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.

2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.

Page 1 of 2

Rev. 02 : March 25, 2005

下载PDF

与W01相关器件

型号	品牌	描述	获取价格	数据表
W010M	CHENG-YI	SINGLE-PHASE SILICON BRIDGE	获取价格
W0174RR060-120	IXYS	Rectifier Diode, 1 Phase, 1 Element, 174A, 1200V V(RRM), Silicon,	获取价格
W0174SR060-120	IXYS	Rectifier Diode, 1 Phase, 1 Element, 174A, 1200V V(RRM), Silicon,	获取价格
W01BA	ETC	SUBMINATURE/MULTI-FUNCTION/UNBRACKETED	获取价格
W01BB	ETC	SUBMINATURE/MULTI-FUNCTION/UNBRACKETED	获取价格
W01BC	ETC	SUBMINATURE/MULTI-FUNCTION/UNBRACKETED	获取价格