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W01

更新时间: 2024-02-29 18:38:32
品牌 Logo 应用领域
DIOTECH /
页数 文件大小 规格书
2页 652K
描述
SINGLE PHASE SILICON BRIDGE RECTIFIER

W01 技术参数

生命周期:Active包装说明:O-PBCY-W4
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N最小击穿电压:50 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:O-PBCY-W4
最大非重复峰值正向电流:50 A元件数量:4
相数:1端子数量:4
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
最大重复峰值反向电压:50 V表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
Base Number Matches:1

W01 数据手册

 浏览型号W01的Datasheet PDF文件第2页 
W005 THRU W10  
SINGLE PHASE SILICON BRIDGE RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 1.5 Ampere  
FEATURES  
WOB  
Ideal for printed circuit board  
Surge overload rating: 50A peak  
High case dielectric strength  
MECHANICAL DATA  
Case: UL-94 Class V-0 recognized Flame Retardant Epoxy  
Terminals  
:
Plated leads solderable per  
MIL-STD 202E, method 208C  
Mounting Position: Any  
Weight: 1.10 g  
Marking: Type Number  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
W06  
600  
420  
600  
W08  
800  
560  
800  
W10  
1000  
700  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
W04  
400  
280  
400  
1.5  
SYMBOL  
W005  
50  
W01  
100  
70  
W02  
200  
140  
200  
UNITS  
V
RRM  
RMS  
V
V
V
V
35  
V
DC  
50  
100  
1000  
Maximum Average Forward Output Current at T  
A
=
25oC  
I
O
A
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
Maximum DC Forward Voltage Drop per Bridge  
Element at 1.5A DC  
I
FSM  
50  
V
F
1.0  
V
Maximum Reverse Current at rated  
10.0  
@T  
A
A
= 25oC  
= 125oC  
I
R
uA  
DC Blocking Voltage per element  
@T  
500  
10  
I2t Rating for Fusing (t<8.3ms)  
I2t  
A2Sec  
pF  
0C/W  
Typical Junction Capacitance ( Note1)  
Typical Thermal Resistance (Note 2)  
C
J
24  
36  
RθJ A  
T
J,  
T
STG  
-55 to + 150  
0 C  
Operating and Storage Temperature Range  
NOTES : 1.Measured at 1 MHZ and applied reverse voltage of 4.0 volts  
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.  

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