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2N3905 PDF预览

2N3905

更新时间: 2024-01-08 18:27:50
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管
页数 文件大小 规格书
2页 40K
描述
Si-Epitaxial PlanarTransistors

2N3905 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.68基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):260 nsVCEsat-Max:0.4 V
Base Number Matches:1

2N3905 数据手册

 浏览型号2N3905的Datasheet PDF文件第2页 
2N3905, 2N3906  
Switching Transistors  
PNP  
PNP  
Si-Epitaxial PlanarTransistors  
Version 2004-01-20  
Power dissipation – Verlustleistung  
625 mW  
Plastic case  
Kunststoffgehäuse  
TO-92  
(10D3)  
Weight approx. – Gewicht ca.  
0.18 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Standard packaging taped in ammo pack  
Standard Pinning  
Standard Lieferform gegurtet in Ammo-Pack  
1 = C 2 = B 3 = E  
Maximum ratings (TA = 25/C)  
Grenzwerte (TA = 25/C)  
2N3905, 2N3906  
40 V  
Collector-Emitter-voltage  
B open  
E open  
C open  
- VCE0  
- VCE0  
- VEB0  
Ptot  
Collector-Base-voltage  
40 V  
Emitter-Base-voltage  
5 V  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (dc)  
625 mW 1)  
100 mA  
200 mA  
150/C  
- IC  
Peak collector current – Kollektorspitzenstrom  
Junction temp. – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
- ICM  
Tj  
TS  
- 55…+ 150/C  
Characteristics (Tj = 25/C)  
Kennwerte (Tj = 25/C)  
Min.  
Typ.  
Max.  
Collector saturation volt. – Kollektor-Sättigungsspannung  
- IC = 10 mA, - IB = 1 mA  
- IC = 50 mA, - IB = 5 mA  
- VCEsat  
- VCEsat  
250 mV  
400 mV  
Base saturation voltage – Basis-Sättigungsspannung  
- IC = 10 mA, - IB = 1 mA  
- IC = 50 mA, - IB = 5 mA  
- VBEsat  
850 mV  
950 mV  
- VBEsat  
- ICEV  
- IEBV  
Collector cutoff current – Kollektorreststrom  
- VCE = 30 V, - VEB = 3 V  
50 nA  
50 nA  
Emitter cutoff current – Emitterreststrom  
- VCE = 30 V, - VEB = 3 V  
1
)
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case  
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden  
32  

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