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BZT52C3V3-7-F PDF预览

BZT52C3V3-7-F

更新时间: 2024-02-26 20:25:49
品牌 Logo 应用领域
CDIL 稳压二极管齐纳二极管测试光电二极管PC
页数 文件大小 规格书
4页 214K
描述
SURFACE MOUNT ZENER DIODE

BZT52C3V3-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:19 weeks风险等级:0.63
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/328022.3.3.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=328022
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=3280223D View:https://componentsearchengine.com/viewer/3D.php?partID=328022
Samacsys PartID:328022Samacsys Image:https://componentsearchengine.com/Images/9/BZT52C3V3-7-F.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/3/BZT52C3V3-7-F.jpgSamacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Small Outline Diode
Samacsys Footprint Name:SOD123Samacsys Released Date:2017-12-21 15:16:54
Is Samacsys:N其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:95 Ω
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
膝阻抗最大值:600 Ω湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.37 W认证状态:Not Qualified
参考标准:AEC-Q101标称参考电压:3.3 V
最大反向电流:5 µA反向测试电压:1 V
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL电压温度Coeff-Max:
最大电压容差:6.06%工作测试电流:5 mA
Base Number Matches:1

BZT52C3V3-7-F 数据手册

 浏览型号BZT52C3V3-7-F的Datasheet PDF文件第2页浏览型号BZT52C3V3-7-F的Datasheet PDF文件第3页浏览型号BZT52C3V3-7-F的Datasheet PDF文件第4页 
410mW Two Terminals  
SMD Zener Diodes  
BZT52C2V4 BZT52C51  
410mW Two Terminals SMD Zener Diodes  
Features  
Planar Die Construction  
410mW Power Dissipation  
Zener Voltage 2.4v to 51v  
RoHS Compliance  
SOD-123  
Mechanical Data  
Case:  
Epoxy:  
SOD-123, molded plastic  
Plastic package has UL flammability 94V-0  
Solderable per MIL-STD-202G,Method 208  
Color band denotes cathode  
Terminals:  
Polarity:  
Approx Weight: 0.01 grams  
Maximum Ratings (T Ambient=25ºC unless noted otherwise)  
Symbol  
Description  
Forward Voltage Drop  
Value  
Unit  
Conditions  
0.9  
V
IF=10mA  
VF  
Power Dissipation  
410  
mW  
Ta=25 °C (Note 1)  
(Note 2)  
Ptot  
Peak Forward Surge Current,8.3ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
2.0  
A
IFSM  
Operating Junction Temperature  
150  
°C  
°C  
TJ  
Storage Temperature Range  
-55 to 150  
TSTG  
Note: 1. Mounted on 5.0mm²(0.13mm thick ) land areas  
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle=4 pulses  
per minute maximum  
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com  
Rev. A/AH 2007-10-11  
Page 1 of 4  
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060  
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415  

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