Datasheet > 晶体管 > 小信号场效应晶体管> 2N7002VA-7-L

2N7002VA-7-L

更新时间： 2024-01-02 10:57:02

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	252K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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数据手册

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2N7002VA-7-L 数据手册

October 2007

2N7002V/VA

N-Channel Enhancement Mode Field Effect Transistor

Features

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant

(Pin1)

SOT - 563F

Marking : AB

Marking : AC

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage R_GS≤ 1.0MΩ

Gate-Source Voltage

Continuous

Pulsed

±20

±40

I_D

Drain Current

Continuous

Pulsed

280

1.5

T_{J ,}T_STG

Junction and Storage Temperature Range

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Total Device Dissipation

Derating above TA = 25°C

250

2.0

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

500

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,

2N7002V/VA Rev. A

www.fairchildsemi.com

12 3 4 5 6

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