5秒后页面跳转
2N7002T-7-F PDF预览

2N7002T-7-F

更新时间: 2024-02-06 09:21:46
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 341K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002T-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.93其他特性:HIGH RELIABILITY
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.115 A最大漏极电流 (ID):0.115 A
最大漏源导通电阻:13.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002T-7-F 数据手册

 浏览型号2N7002T-7-F的Datasheet PDF文件第2页浏览型号2N7002T-7-F的Datasheet PDF文件第3页浏览型号2N7002T-7-F的Datasheet PDF文件第4页浏览型号2N7002T-7-F的Datasheet PDF文件第5页浏览型号2N7002T-7-F的Datasheet PDF文件第6页 
October 2007  
2N7002T  
N-Channel Enhancement Mode Field Effect Transistor  
Features  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free/RoHS Compliant  
D
S
G
SOT - 523F  
Marking : AA  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
60  
Units  
VDSS  
Drain-Source Voltage  
V
V
VDGR  
VGSS  
Drain-Gate Voltage RGS 1.0MΩ  
60  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
ID  
Drain Current  
Continuous  
Continuous @ 100°C  
Pulsed  
115  
73  
800  
mA  
TJ  
Junction Temperature  
150  
°C  
°C  
TSTG  
Storage Temperature Range  
-55 to +150  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Total Device Dissipation  
Derating above TA = 25°C  
200  
1.6  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient *  
625  
°C/W  
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,  
© 2007 Fairchild Semiconductor Corporation  
2N7002T Rev. A  
www.fairchildsemi.com  
1

与2N7002T-7-F相关器件

型号 品牌 描述 获取价格 数据表
2N7002TB PANJIT 60V N-CHANNEL ENHANCEMENT MODE MOSFET

获取价格

2N7002TC DIODES 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

获取价格

2N7002T-C SECOS N-Channel Plastic- Encapsulate MOSFETS

获取价格

2N7002TG-AN3-R UTC 300mA, 60V N-CHANNEL POWER MOSFET

获取价格

2N7002TL-AN3-R UTC 300mA, 60V N-CHANNEL POWER MOSFET

获取价格

2N7002-TP MCC N-Channel MOSFET

获取价格