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2N7002K-7 PDF预览

2N7002K-7

更新时间: 2024-01-13 05:44:08
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
5页 161K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002K-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:0.47Samacsys Confidence:
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/248860.2.3.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=248860PCB Footprint:https://componentsearchengine.com/footprint.php?partID=248860
3D View:https://componentsearchengine.com/viewer/3D.php?partID=248860Samacsys PartID:248860
Samacsys Image:https://componentsearchengine.com/Images/9/2N7002K-7.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/2/2N7002K-7.jpg
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23
Samacsys Released Date:2017-01-11 16:09:24Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.3 A
最大漏极电流 (ID):0.3 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002K-7 数据手册

 浏览型号2N7002K-7的Datasheet PDF文件第2页浏览型号2N7002K-7的Datasheet PDF文件第3页浏览型号2N7002K-7的Datasheet PDF文件第4页浏览型号2N7002K-7的Datasheet PDF文件第5页 
2N7002K  
60V N-Channel Enhancement Mode MOSFET - ESD Protected  
FEATURES  
• RDS(ON), VGS@10V,IDS@500mA=3  
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω  
• Advanced Trench Process Technology  
• High Density Cell Design For Ultra Low On-Resistance  
• Very Low Leakage Current In Off Condition  
• Specially Designed for Battery Operated Systems, Solid-State Relays  
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.  
• ESD Protected 2KV HBM  
• Component are in compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: SOT-23 Package  
D
Terminals : Solderable per MIL-STD-750,Method 2026  
• Marking : K72  
3
1
2
G
S
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )  
PARAMETER  
Symbol  
VD S  
Limit  
60  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
VG S  
+20  
300  
V
mA  
ID  
1 )  
Pulsed Drain Current  
ID M  
2000  
mA  
TA =25O  
TA =75O  
C
C
350  
210  
Maximum Power Dissipation  
PD  
mW  
O C  
Operating Junction and Storage Temperature Range  
Junction-to Ambient Thermal Resistance(PCB mounted)2  
TJ ,TS T G  
-55 to + 150  
357  
Rθ J A  
O C/W  
Note: 1. Maximum DC current limited by the package  
2. Surface mounted on FR4 board, t < 5 sec  
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
STAD-JAN.03.2007  
PAGE . 1  

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